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Analytical Model for Phosphorus Large Angle Tilted Implantation

  • A. Burenkov
  • W. Bohmayr
  • J. Lorenz
  • H. Ryssel
  • S. Selberherr

Abstract

This paper describes a model for the simulation of large angle tilted implantation of phosphorus in silicon. To reduce the size of the precalculated look-up parameter table, the symmetry of the silicon crystal is exploited. Examples demonstrate the importance of ion channeling effects in LATID implantation.

Keywords

Rotation Angle Silicon Crystal Monte Carlo Calculation Equivalent Direction Simulation Plane 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    J. Lorenz, C. Hill, H. Jaouen, C. Lombardi, C. Lyden, K. de Meyer, J. Pelka, A. Poncet, M. Rudan, S. Solmi, The STORM Technology CAD System, Proceedings of the International Workshop on TCAD Systems (eds F. Fasching, S. Halama, and S. Selberherr), Springer Verlag, Wien, pp. 163–196, 1993.Google Scholar
  2. [2]
    H. Stippel and S. Selberherr, Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location, IEICE Transactions on Electronics, Vol. E77-C, No. 2, pp. 118–123, 1994.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • A. Burenkov
    • 1
  • W. Bohmayr
    • 2
  • J. Lorenz
    • 1
  • H. Ryssel
    • 1
    • 3
  • S. Selberherr
    • 2
  1. 1.Fraunhofer-Institut für Integrierte SchaltungenErlangenGermany
  2. 2.Institute for MicroelectronicsTU ViennaViennaAustria
  3. 3.Lehrstuhl für Elektronische BauelementeUniversität Erlangen-NürnbergErlangenGermany

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