Abstract
This paper describes a model for the simulation of large angle tilted implantation of phosphorus in silicon. To reduce the size of the precalculated look-up parameter table, the symmetry of the silicon crystal is exploited. Examples demonstrate the importance of ion channeling effects in LATID implantation.
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References
J. Lorenz, C. Hill, H. Jaouen, C. Lombardi, C. Lyden, K. de Meyer, J. Pelka, A. Poncet, M. Rudan, S. Solmi, The STORM Technology CAD System, Proceedings of the International Workshop on TCAD Systems (eds F. Fasching, S. Halama, and S. Selberherr), Springer Verlag, Wien, pp. 163–196, 1993.
H. Stippel and S. Selberherr, Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location, IEICE Transactions on Electronics, Vol. E77-C, No. 2, pp. 118–123, 1994.
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© 1995 Springer-Verlag Wien
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Burenkov, A., Bohmayr, W., Lorenz, J., Ryssel, H., Selberherr, S. (1995). Analytical Model for Phosphorus Large Angle Tilted Implantation. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_118
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_118
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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