Monte Carlo Simulation of Multiple-Species Ion Implantation and its Application to the Modeling of 0.1µ PMOS Devices
New process concepts require multiple implantations into the same volume of Si with only one annealing step after all implantations have been performed. Moreover, there is a trend towards BF2 implantation for shallow p-doping. We have extended the Monte Carlo simulator IMSIL to consider for each implantation the accumulated lattice damage of all previous implantation steps, and we have determined the parameters of the stopping power and damage accumulation models for BF2 ions. The influence of the cummulative damage on the implantation profiles and on the threshold voltage behavior is discussed for a specific PMOS device.
KeywordsGate Length PMOS Transistor Thermal Budget Implantation Modeling PMOS Device
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- K. Lee et al., IEDM Techn. Dig., p. 131, 1993.Google Scholar
- G. Hobler et al., J. Appl. Phys. 77, 1995, in press.Google Scholar
- A. Simionescu et al., Nucl. Instr. Meth. B, in press.Google Scholar
- TMA TSUPREM-4, Version 6, 1993.Google Scholar
- S. Selberherr, Proc. VLSI Process/Dev. Model. Workshop, p. 40–41, 1989.Google Scholar
- H. Jacobs et al., IEDM Techn. Dig., p. 307, 1993.Google Scholar