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Monte Carlo Simulation of Multiple-Species Ion Implantation and its Application to the Modeling of 0.1µ PMOS Devices

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Simulation of Semiconductor Devices and Processes

Abstract

New process concepts require multiple implantations into the same volume of Si with only one annealing step after all implantations have been performed. Moreover, there is a trend towards BF2 implantation for shallow p-doping. We have extended the Monte Carlo simulator IMSIL to consider for each implantation the accumulated lattice damage of all previous implantation steps, and we have determined the parameters of the stopping power and damage accumulation models for BF2 ions. The influence of the cummulative damage on the implantation profiles and on the threshold voltage behavior is discussed for a specific PMOS device.

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References

  1. K. Lee et al., IEDM Techn. Dig., p. 131, 1993.

    Google Scholar 

  2. G. Hobler, Nucl. Instr. Meth. B 96, p. 155, 1995.

    Article  Google Scholar 

  3. G. Hobler, and H. Pötzl, Mat. Res. Soc. Symp. Proc. 279, p. 165, 1993.

    Article  Google Scholar 

  4. G. Hobler et al., J. Appl. Phys. 77, 1995, in press.

    Google Scholar 

  5. A. Simionescu et al., Nucl. Instr. Meth. B, in press.

    Google Scholar 

  6. Al. F. Tasch et al., J. Electrochem. Soc. 136, p. 810, 1989.

    Article  Google Scholar 

  7. A. Walker et al., J. Appl. Phys. 73, p. 4048, 1993.

    Article  Google Scholar 

  8. TMA TSUPREM-4, Version 6, 1993.

    Google Scholar 

  9. S. Selberherr, Proc. VLSI Process/Dev. Model. Workshop, p. 40–41, 1989.

    Google Scholar 

  10. H. Jacobs et al., IEDM Techn. Dig., p. 307, 1993.

    Google Scholar 

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Author information

Authors and Affiliations

  1. Institut für Festkörperelektronik, Technische Universität Wien, Gußhausstraße 25-29/E362, A-1040, Wien, Austria

    A. Simionescu & G. Hobler

  2. Siemens AG, Zentralabteilung Forschung und Entwicklung, ZFE T ME 3, 81730, München, Germany

    F. Lau

Authors
  1. A. Simionescu
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  2. G. Hobler
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  3. F. Lau
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Simionescu, A., Hobler, G., Lau, F. (1995). Monte Carlo Simulation of Multiple-Species Ion Implantation and its Application to the Modeling of 0.1µ PMOS Devices. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_117

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_117

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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