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Modelling of silicon interstitial surface recombination velocity at non-oxidizing interfaces

  • C. Tsamis
  • D. Tsoukalas

Abstract

In this work we present a model for the surface recombination velocity of silicon interstitials at non oxidizing interfaces. The model takes in to account the experimentally observed diffusion of silicon atoms through an oxide. The influence of the interfacial region in also discussed.

Keywords

Interfacial Layer Interfacial Region Silicon Atom Silicon Membrane Surface Recombination Velocity 
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References

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    D. Tsoukalas, C. Tsamis and J. Stoemenos, Appl. Phys. Lett. 63, 3167 (1993)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • C. Tsamis
    • 1
  • D. Tsoukalas
    • 1
  1. 1.IMEL, Inst. of MicroelectronicsNCSR “Demokritos”Aghia ParaskeviGreece

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