Precipitation phenomena and transient diffusion/activation during high concentration boron annealing
The understanding of low thermal budget transient diffusion and activation of shallow p+ implants remains a crucial issue of technology simulation. In this paper, we apply a coupled point defect assisted diffusion/precipitation model to the redistribution phenomena observed during annealing of shallow boron implants. Comparison with experimental data shows that the precipitation model can account for unusual segregation phenomena in the highly disordered zone around the projected range of the as-implanted profile.
KeywordsRapid Thermal Anneal Boron Atom Precipitation Model Precipitation Phenomenon Point Defect Model
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