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Precipitation phenomena and transient diffusion/activation during high concentration boron annealing

  • Alexander Höfler
  • Thomas Feudel
  • Arno Liegmann
  • Norbert Strecker
  • Wolfgang Fichtner
  • Yuji Kataoka
  • Kunihiro Suzuki
  • Nobuo Sasaki

Abstract

The understanding of low thermal budget transient diffusion and activation of shallow p+ implants remains a crucial issue of technology simulation. In this paper, we apply a coupled point defect assisted diffusion/precipitation model to the redistribution phenomena observed during annealing of shallow boron implants. Comparison with experimental data shows that the precipitation model can account for unusual segregation phenomena in the highly disordered zone around the projected range of the as-implanted profile.

Keywords

Rapid Thermal Anneal Boron Atom Precipitation Model Precipitation Phenomenon Point Defect Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Alexander Höfler
    • 1
  • Thomas Feudel
    • 1
  • Arno Liegmann
    • 1
  • Norbert Strecker
    • 1
  • Wolfgang Fichtner
    • 1
  • Yuji Kataoka
    • 2
  • Kunihiro Suzuki
    • 2
  • Nobuo Sasaki
    • 2
  1. 1.Integrated Systems LaboratorySwiss Federal Institute of Technology, ETH-ZentrumZürichSwitzerland
  2. 2.ULSI Research DivisionFujitsu Laboratories, Ltd.AtsugiJapan

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