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Determination of Vacancy Diffusivity in Silicon for Process Simulation

  • T. Shimizu
  • Y. Zaitsu
  • S. Matsumoto
  • E. Arai
  • M. Yoshida
  • T. Abe
Conference paper

Abstract

Vacancy diffusivity has been determined by using the fact that Si3N4 films deposited on silicon can be used as an extrinsic source of vacancies. Excess vacancies generated at the backside with Si3N4 films migrate to the boronimplanted region at the top side and its boron diffusion is retarded. Using these data, vacancy diffusivity is determined from the simulation.

Keywords

Vacancy Concentration Excess Vacancy Intrinsic Diffusivity Vacancy Diffusivity Boron Diffusion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    J. D. Plummer, ”Process simulation in submicron silicon structures,” Proc. of Symposium on PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY (The Electrochemical Society), pp. 93–102, 1993.Google Scholar
  2. [2]
    T. Y. Tan and U. Gösele, “Point defects, diffusion processes, and swirl defect formation in silicon,” Appl. Phys., vol. A37, pp. 1–17, 1985.Google Scholar
  3. [3]
    K. Osada, Y. Zaitsu, S. Matsumoto, M. Yoshida, E. Arai and T. Abe, “Effects of stress in the deposited silicon nitride films on boron diffusion of silicon,” J. Electrochem. Soc., vol. 142, no. 1, pp. 202–206, 1995.CrossRefGoogle Scholar
  4. [4]
    K. Osada, Y. Zaitsu, S. Matsumoto, S. Tanigawa, A. Uedono, M. Yoshida, E. Arai and T. Abe, “Direct observation of vacancy supersaturation in retarded diffusion of boron in silicon probed by monoenergetic positron beam,” Extended Abstract of Solid State Devices and Materials, pp. 739–741, 1994.Google Scholar
  5. [5]
    R. B. Fair, in Processing Technologies, D. Knang, Editor, Applied Solid State Science, Suppl., 2B, Academic Press, Inc., New York, pp. 1–103, 1981.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • T. Shimizu
    • 1
  • Y. Zaitsu
    • 1
  • S. Matsumoto
    • 1
  • E. Arai
    • 2
  • M. Yoshida
    • 3
  • T. Abe
    • 4
  1. 1.Department of Electrical EngineeringKeio UniversityHiyoshi, YokohamaJapan
  2. 2.NTT LSI LaboratoriesAtsugi, KanagawaJapan
  3. 3.Kyusyu Institute of DesignShiobaru, FukuokaJapan
  4. 4.Shinetsu SemiconductorsIsobe, GunmaJapan

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