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Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT

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Simulation of Semiconductor Devices and Processes

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Abstract

This paper will provide information on the features of the new device simulator MINIMOS NT and demonstrate its efficiency in transient simulation of complex device structures. An example will indicate the feasibility of such simulations even on a workstation.

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References

  1. R. Melen and D. Buss (eds.). Charge-Coupled Devices: Technology and Applications. IEEE Press. 1976.

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  4. C. Fischer and S. Selberherr, “Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditiones”, Proc. Int. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD V. pp. 123–126, 1994.

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  5. S. Halama et al., ”The Viennese Integrated System for Technology CAD Applications”, Technology CAD Systems, pp. 197–236, 1993.

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Author information

Authors and Affiliations

  1. Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040, Vienna, Austria

    M. Rottinger, T. Simlinger & S. Selberherr

Authors
  1. M. Rottinger
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  2. T. Simlinger
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  3. S. Selberherr
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Rottinger, M., Simlinger, T., Selberherr, S. (1995). Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_106

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_106

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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