Abstract
Optical lithography does not allow the scaling of MOS transistors down to 100nm dimensions. Thus the channel length of high speed MOS devices must depend on alternative processing steps. In this work layer deposition and etching are analysed with respect to the formation of very short MOS transistors with vertical orientation. Dopant diffusion with very steep gradients are studied in epitaxial layers. Process and device engineering aspects for a vertical MOS transistor at the sidewall of an etched trench are discussed.
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References
A.H. Perera et.al.; IEDM Tech. Dig. 1994, p.851
W.H. Krautschneider, F. Lau, H. Gossner and H. Schaefer; to be printed in Proceedings of the MRS 1994 Fall Meeting, Symposium F
Technology Modeling Associates, Palo Alto CA
K. Ghaderi et.al.; The Electrochem. Soc., Spring Meeting 1994, Ext. Abstr., No.459
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© 1995 Springer-Verlag Wien
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Lau, F., Krautschneider, W.H., Hofmann, F., Gossner, H., Schäfer, H. (1995). Process- and Devicesimulation of Very High Speed Vertical MOS Transistors. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_105
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_105
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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