Sensitivity Analysis of an Industrial CMOS Process using RSM Techniques
This paper describes a method to identify the process parameters responsible for the spread in the transistor parameters. The method consists of modeling the response surfaces for the transistor parameters and the correlations between them in terms of process variables. Incorporation of the correlations in the analysis turned out to be essential in order to correctly identify the cause for the fluctuations in the transistor parameters.
KeywordsResponse Surface Response Surface Modeling Process Weakness Simulation Chain Channel Profile
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