Sensitivity Analysis of an Industrial CMOS Process using RSM Techniques

  • M. J. van Dort
  • D. B. M. Klaassen


This paper describes a method to identify the process parameters responsible for the spread in the transistor parameters. The method consists of modeling the response surfaces for the transistor parameters and the correlations between them in terms of process variables. Incorporation of the correlations in the analysis turned out to be essential in order to correctly identify the cause for the fluctuations in the transistor parameters.


Response Surface Response Surface Modeling Process Weakness Simulation Chain Channel Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    G. Box, W. Hunter and J. Hunter, Statistics for Experimenters, Wiley & Sons.Google Scholar
  2. [2]
    R. Velghe, D. Klaassen and F. Klaassen, Tech Digest IEDM, p. 485 (1993).Google Scholar
  3. [3]
    R. Cartuyvels et. al. Proc. SISDEP, p. 29 (1993).Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • M. J. van Dort
    • 1
  • D. B. M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesAA EindhovenThe Netherlands

Personalised recommendations