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A 2-D modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structures for the determination of interface state and grain boundary state distributions

  • A-C. Salaün
  • H. Lhermite
  • B. Fortin
  • O. Bonnaud
Conference paper

Abstract

The aim of this work is the study of the Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structure. This study is carried out by means of the two-dimension numerical resolution of Poisson’s equation with a model of state continuum in the bandgap and at the Si/SiO2 interface. By fitting experimental C(V) data with computed results, both grain boundary state and interface state distributions are determined.

Keywords

Valence Band Edge Band Tail Polysilicon Layer Trap Distribution Band Tail State 
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References

  1. [1]
    W. Shockley and W. T. Read, “Statistics of the recombinations of holes and electrons”, Phys. Rev., vol. 87, no. 5, pp. 835–842, 1952.MATHCrossRefGoogle Scholar
  2. [2]
    C. T. Sah and W. Shockley, “Electron-hole recombination statistics in semiconductors through flaws with many charge conditions”. Phys. Rev., vol.109, no.4, 1958.Google Scholar
  3. [3]
    J. H. Werner, M. Peisl, “Exponential band tails in polycrystalline semiconductors films”, Physical Review B, Vol.31, No. 10, pp. 6881–6883, May 1985.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • A-C. Salaün
    • 1
  • H. Lhermite
    • 1
  • B. Fortin
    • 1
  • O. Bonnaud
    • 1
  1. 1.Groupe de Microélectronique et VisualisationURA CNRS 1648RENNES CedexFrance

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