Impact Ionization Model Using Second- and Fourth-Order Moments of Distribution Function
This paper describes an impact ionization model suitable for calculation of an impact ionization rate in inhomogeneous electric field. The model is formulated using second- and fourth-order moments of an electron energy distribution function. A set of model equations for carrier transport in semiconductor devices is also presented to perform practical device simulation with the impact ionization model. The calculation result with the new models agrees to Monte Carlo simulation result.
KeywordsMonte Carlo Monte Carlo Simulation Impact Ionization Electron Energy Distribution Function Boltzmann Transport Equation
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