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Modeling Transport Across Thin Dielectric Barriers

  • Andreas Schenk
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

In modern microelectronics the transport of carriers across thin and ultra-thin dielectric barriers is of considerable interest. Well-known problems are the highenergy injection of carriers into gate oxides of MOSFETs [5.13, 5.43] leading to a long-term shift of their threshold voltage (so-called degradation), the strong tunnel currents during the erase mode of electrically erasable programmable read only memories (EPROMs) [5.68], the current-voltage characteristics of metal-insulator-semiconductor (MIS) solar cells [5.15, 5.25, 5.69, 5.78], or the tunneling leakage occurring in memory cells [5.5, 5.33]. Apart from a realistic distribution function, the simulation of the current requires a good knowledge of the quantum-mechanical transmission probability.

Keywords

Barrier Height Gate Oxide Resonant Tunneling Image Force Direct Tunneling 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1998

Authors and Affiliations

  • Andreas Schenk
    • 1
  1. 1.Institut für Integrierte SystemeETH ZürichSchweiz

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