Skip to main content
SpringerLink
Log in

Metal-Semiconductor Contact

  • Chapter
Advanced Physical Models for Silicon Device Simulation

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

  • 521 Accesses

Abstract

The metal-semiconductor interface is among the most challenging problems in the field of solid-state theory and device physics. A variety of physical phenomena, e.g. the influence of interface states on barrier height [4.20, 4.34], the effect of interfacial layers (dipole, oxide, or contamination) [4.2, 4.6, 4.15, 4.18], inelastic scattering events [4.16, 4.22], recombination, trapping [4.5, 4.10] and trap-assisted tunneling [4.9], vertical and lateral potential fluctuations [4.8], barrier height fluctuations [4.33], interface roughness [4.30], band-state mixing [4.12], realistic image forces, hot carrier effects, and some other issues make the theoretical modeling a complicated task. Simplified contact models, e.g. suitable for device simulation, have to neglect most of all these effects.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. M. Abramowitz and I. A. Stegun. Handbook of Mathematical Functions with Formulas, Graphs, and Mathematical Tables. Dover Publications, New York, 1972.

    MATH  Google Scholar 

  2. J. M. Andrews and M. P. Lepselter. Reverse Current-Voltage Characteristics of Metal-Silicide Schottky Diodes. Solid-State Electronics, 13:1011–23, 1970.

    Article  Google Scholar 

  3. B. J. Baliga. The Pinch Rectifier: A Low Forward-Drop, High-speed Power Diode. IEEE Electron Device Letters, EDL-5:194–96, 1984.

    Article  Google Scholar 

  4. B. J. Baliga. Analysis of a High-Voltage Merged p-i-n/Schottky (MPS) Rectifier. IEEE Electron Device Letters, EDL-8:407–09, 1987.

    Article  Google Scholar 

  5. D. Bauza. Effect of Deep Traps on the Capacitance-Voltage Plots of Schottky Barrier Diodes: Application to the Study of Sputter-Etched Ti-W/n-Si Diodes. Jour. Appl. Phys., 73 (4): 1858–65, 1993.

    Article  Google Scholar 

  6. H. C. Card and E. H. Rhoderick. The Effect of an Interfacial Layer on Minority Carrier Injection in Forward-Biased Silicon Schottky Diodes. Solid-State Electronics, 16:365–74, 1973.

    Article  Google Scholar 

  7. D. M. Caughey and R. E. Thomas. Carrier Mobilities in Silicon Empirically Related to Doping and Field. Proc. IEEE, pp. 2192–93, December 1967.

    Google Scholar 

  8. C. Y. Chang and S. M. Sze. Carrier Transport Across Metal-Semiconductor Barriers. Solid-State Electronics, 13:727–40, 1970.

    Article  Google Scholar 

  9. A. G. Chynoweth, W. L. Feldmann, and R. A. Logan. Excess Tunnel Current in Silicon Esaki Junctions. Phys. Rev., 121:684–93, 1961.

    Article  Google Scholar 

  10. A. Cola, M. G. Lupo, L. Vasanelli, and A. Valentini. Characterization of a Defect at a Schottky Barrier Interface by Current and Capacitance Measurements. Solid-State Electronics, 36 (5):785–89, 1993.

    Article  Google Scholar 

  11. J. W. Conley, C. B. Duke, G. D. Mahan, and J. J. Tiemann. Electron Tunneling in Metal-Semiconductor Barriers. Phys. Rev., 150 (2):466–69, 1966.

    Article  Google Scholar 

  12. J. W. Conley and G. D. Mahan. Tunneling Spectroscopy in GaAs. Phys. Rev., 161 (3):681–95, 1967.

    Article  Google Scholar 

  13. C. R. Crowell and M. Beguwala. Recombination Velocity Effects on Current Diffusion and Imref in Schottky Barriers. Solid-State Electronics, 14:1149–57, 1971.

    Article  Google Scholar 

  14. C. R. Crowell and V. L. Rideout. Normalized Thermionic-Field (T-F) Emission in Metal-Semiconductor (Schottky) Barriers. Solid-State Electronics, 12:89–105, 1969.

    Article  Google Scholar 

  15. C. R. Crowell, H. B. Shore, and E. E. LaBate. Surface-State and Interface Effects in Schottky Barriers at n-Type Silicon Surfaces. Jour. Appl. Phys., 36 (12):3843–50, 1965.

    Article  Google Scholar 

  16. C. R. Crowell and S. M. Sze. Current Transport in Metal-Semiconductor Barriers. Solid-State Electronics, 9:1035–48, 1966.

    Article  Google Scholar 

  17. T. Feudel. Integrated Systems Laboratory, ETH Zurich. Private communication.

    Google Scholar 

  18. S. J. Fonash. A Reevaluation of the Meaning of Capacitance Plots for Schottky-Barrier-Type Diodes. Jour. Appl. Phys., 54 (4):1966–675, 1983.

    Article  Google Scholar 

  19. R. H. Fowler and L. W. Nordheim. Electron Emission in Intense Electric Fields. Proc. Roy. Soc., A 119:173–81, 1928.

    Google Scholar 

  20. J. L. Freeouf. Are Interface States Consistent with Schottky Barrier Measurements? Appi. Phys. Lett., 41 (3):285–87, 1982.

    Article  Google Scholar 

  21. W. Grabinski. Integrated Systems Laboratory, ETH Zurich. Private communication.

    Google Scholar 

  22. E. Y. Lee and L. J. Schowalter. Phonon Scattering and Quantum Mechanical Reflection at the Schottky Barrier. Jour. Appl. Phys., 70 (4):2156–62, 1991.

    Article  Google Scholar 

  23. J. L. Moll. Physics of Semiconductors. McGraw-Hill, New York, 1964.

    MATH  Google Scholar 

  24. J. O. Nylander. Computer Simulations of Silicon Device Structures with Emphasis on Metal-Semiconductor Contacts. PhD thesis, Uppsala University, 1989. Acta Universitatis Upsaliensis 194.

    Google Scholar 

  25. J. Olsson, H. Norde, and U. Magnusson. Investigation of the Current-Voltage Behavior of a Combined Schottky-p-n Diode. Solid-State Electronics, 35(9): 1229–31, 1992.

    Article  Google Scholar 

  26. F. A. Padovani and R. Stratton. Field and Thermionic-Field Emission in Schottky Barriers. Solid-State Electronics, 9:695–707, 1966.

    Article  Google Scholar 

  27. D. Schroeder. An Analytical Model of Non-ideal Ohmic and Schottky Contacts for Device Simulation. In Proc. 4th Int. Conf. on Simulation of Semiconductor Devices and Processes, Zürich, Switzerland, Sept. 12–14, 1991.

    Google Scholar 

  28. D. Schroeder. A Boundary Condition for the Poisson Equation at Non-ideal Metal-Semiconductor Interfaces. In Proc. of the NASECODE VIII Conference, Vienna, Austria, May 18–22, 1992.

    Google Scholar 

  29. R. Stratton. Theory of Field Emission from Semiconductors. Phys. Rev., 125 (1):67, 1962.

    Article  MATH  Google Scholar 

  30. J. P. Sullivan, R. T. Tung, M. R. Pinto, and W. R. Graham. Electron Transport in Inho-mogeneous Schottky Barriers: A Numerical Study. Jour. Appl. Phys., 70 (12):7403–24, 1991.

    Article  Google Scholar 

  31. S. M. Sze. Physics of Semiconductor Devices, 2nd ed. John Wiley and Sons, New York, 1981.

    Google Scholar 

  32. S. L. Tu and B. J. Baliga. Controlling the Characteristics of the MPS Rectifier by Variation of Area of Schottky Region. IEEE Trans. Electron Devices, ED-40(7): 1307–15, 1993.

    Article  Google Scholar 

  33. J. H. Werner and H. H. Güttler. Barrier Inhomogeneities at Schottky Contacts. Jour. Appl. Phys., 69(3):1522–33, 1991.

    Article  Google Scholar 

  34. X. Wu and E. S. Yang. Interface Capacitance in Metal-Semiconductor Junctions. Jour. Appl. Phys., 65 (9):3560–67, 1989.

    Article  Google Scholar 

  35. A. Y. C. Yu. Electron Tunneling and Contact Resistance of Metal-Silicon Contact Barriers. Solid-State Electronics, 13:239–47, 1970.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institut für Integrierte Systeme, ETH Zürich, Schweiz

    Priv.-Doz. Dr. rer. nat. Andreas Schenk

Authors
  1. Priv.-Doz. Dr. rer. nat. Andreas Schenk
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 1998 Springer-Verlag Wien

About this chapter

Cite this chapter

Schenk, A. (1998). Metal-Semiconductor Contact. In: Advanced Physical Models for Silicon Device Simulation. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6494-5_4

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-6494-5_4

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7334-3

  • Online ISBN: 978-3-7091-6494-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation