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Mobility Model for Hydrodynamic Transport Equations

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Advanced Physical Models for Silicon Device Simulation

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

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Abstract

The hydrodynamic (HD) transport scheme [2.8, 2.56] has become a standard device simulation tool with the capability for describing nonlocal and nonstationary phenomena. Computation times compare favorably with those of Monte Carlo (MC) simulations [2.23] and methods based on a spherical-harmonics (SH) expansion of the Boltzmann transport equation (BTE) [2.59]. Thus, it is suitable also for more sophisticated applications like power-device, multi-device or 3D-device simulations.

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  1. Institut für Integrierte Systeme, ETH Zürich, Schweiz

    Priv.-Doz. Dr. rer. nat. Andreas Schenk

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  1. Priv.-Doz. Dr. rer. nat. Andreas Schenk
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© 1998 Springer-Verlag Wien

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Schenk, A. (1998). Mobility Model for Hydrodynamic Transport Equations. In: Advanced Physical Models for Silicon Device Simulation. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6494-5_2

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  • DOI: https://doi.org/10.1007/978-3-7091-6494-5_2

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7334-3

  • Online ISBN: 978-3-7091-6494-5

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