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Simulation of Silicon Devices: An Overview

  • Andreas Schenk
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

The description of transport in semiconductor devices requires models for both the interaction processes and the embedding system. These models have different form depending on the transport equations used, but on every level one needs expressions for the scattering of charge carriers with elementary excitations of the crystal as well as with each other, with impurities, device boundaries or interior interfaces, and models of all generation-recombination processes. The environmental system is given by material parameters, e.g. the band gap and the intrinsic carrier density, by external quantities like the doping concentration, defect profiles, boundaries, and others.

Keywords

Monte Carlo Impact Ionization Mobility Model Inversion Layer Auger Recombination 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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© Springer-Verlag Wien 1998

Authors and Affiliations

  • Andreas Schenk
    • 1
  1. 1.Institut für Integrierte SystemeETH ZürichSchweiz

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