Basic Electronic Transport

  • Arokia Nathan
  • Henry Baltes
Part of the Computational Microelectronics book series (COMPUTATIONAL)


In contrast to very large scale integrated (VLSI) devices, microtransducers have relatively large dimensions and are not in the race to push the limits of feature size into the submicron regime. Thus with microtransducers, it is reasonable to assume a static picture for electrical transport in the device, whereby the mobile charge carriers are in equilibrium with the host lattice. This permits the use of the classical model comprising Poisson’s equation, which relates the electrostatic potential and space charge in the device, and the electron and hole continuity equations, which account for charge conservation, with current density relations based on the drift-diffusion formulation. Effects of non-static transport have become very important in VLSI devices where the active device dimensions are reaching scales (nm) where the carrier transit time becomes comparable to the collision time.


Barrier Height Trap Density Very Large Scale Integrate Artificial Boundary Isothermal Behavior 


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Copyright information

© Springer-Verlag/Wien 1999

Authors and Affiliations

  • Arokia Nathan
    • 1
  • Henry Baltes
    • 2
  1. 1.Dept. of Electrical and Computer EngineeringUniversity of WaterlooWaterlooCanada
  2. 2.Physical Electronics LaboratoryETH HoenggerbergZürichSwitzerland

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