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Basic Electronic Transport

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Microtransducer CAD

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

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Abstract

In contrast to very large scale integrated (VLSI) devices, microtransducers have relatively large dimensions and are not in the race to push the limits of feature size into the submicron regime. Thus with microtransducers, it is reasonable to assume a static picture for electrical transport in the device, whereby the mobile charge carriers are in equilibrium with the host lattice. This permits the use of the classical model comprising Poisson’s equation, which relates the electrostatic potential and space charge in the device, and the electron and hole continuity equations, which account for charge conservation, with current density relations based on the drift-diffusion formulation. Effects of non-static transport have become very important in VLSI devices where the active device dimensions are reaching scales (nm) where the carrier transit time becomes comparable to the collision time.

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Authors and Affiliations

  1. Dept. of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada

    Prof. Dr. Arokia Nathan

  2. Physical Electronics Laboratory, ETH Hoenggerberg, CH-8093, Zürich, Switzerland

    Prof. Dr. Henry Baltes

Authors
  1. Prof. Dr. Arokia Nathan
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  2. Prof. Dr. Henry Baltes
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© 1999 Springer-Verlag/Wien

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Nathan, A., Baltes, H. (1999). Basic Electronic Transport. In: Microtransducer CAD. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6428-0_2

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  • DOI: https://doi.org/10.1007/978-3-7091-6428-0_2

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7321-3

  • Online ISBN: 978-3-7091-6428-0

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