Electron Beam Lithography Simulation for Subquartermicron and High Density Patterns
A fast simulation tool for electron beam lithography is applied for the prediction of energy deposition and the resist profile of high resolution patterns. For the exposure part, an analytical solution based on the Boltzmann transport equation is used. The energy deposition has been combined with analytical functions describing the resist development and complete simulation of dense layouts in the sub-quarter-micron range has been carried out. The simulation results have been compared with experimental ones and found in very good agreement.
KeywordsEnergy Deposition Simulation Tool Electron Beam Lithography Beam Shape Boltzmann Transport Equation
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- Glezos N. Raptis I. A fast electron beam lithography simulator based on Boltzmann transport equation IEEE Trans. CAD 1996 15: 92–100Google Scholar
-  Raptis I. Ph.D thesis University of Athens 1996Google Scholar
- Raptis I., Velesiotis D., Vasilopoulou M., Argitis P. Development mechanism study by dissolution monitoring of posistive methacrylate resists Microelec. Eng. 2000 53:489–492Google Scholar