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Electron Beam Lithography Simulation for Subquartermicron and High Density Patterns

  • loannis Raptis
  • Nikos Glezos
Conference paper

Abstract

A fast simulation tool for electron beam lithography is applied for the prediction of energy deposition and the resist profile of high resolution patterns. For the exposure part, an analytical solution based on the Boltzmann transport equation is used. The energy deposition has been combined with analytical functions describing the resist development and complete simulation of dense layouts in the sub-quarter-micron range has been carried out. The simulation results have been compared with experimental ones and found in very good agreement.

Keywords

Energy Deposition Simulation Tool Electron Beam Lithography Beam Shape Boltzmann Transport Equation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Glezos N. Raptis I. A fast electron beam lithography simulator based on Boltzmann transport equation IEEE Trans. CAD 1996 15: 92–100Google Scholar
  2. [2] Raptis I. Ph.D thesis University of Athens 1996Google Scholar
  3. [3]
    Neureuther A. Kyser D. Ting C. E-beam resist edge profile simulation IEEE Trans. Electron Devices 1979 26:686–691CrossRefGoogle Scholar
  4. [4]
    Raptis I., Velesiotis D., Vasilopoulou M., Argitis P. Development mechanism study by dissolution monitoring of posistive methacrylate resists Microelec. Eng. 2000 53:489–492Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • loannis Raptis
    • 1
  • Nikos Glezos
    • 1
  1. 1.Institute of MicroelectronicsNCSR “DEMOKRITOS” 15310 AgParaskevi AttikisGREECE

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