Two-Dimensional Diffusion Characterization of Boron in Silicon using Reverse Modeling

  • Eitan N Shauly
  • Richard Ghez
  • Yigal Komem
Conference paper


This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The Reverse Modeling method was used to determine the diffusion coefficient (D I ) surface recombination rate of defects (K 1 ) and the characteristics of the injecting source. Analysis showed similarity between D I in 2-D system compared with the value obtained from non-patterned samples. The results for D I and K 1 are very well described by the Arrhenius expressions. D was found to be related to the substrate type e.g. EPI or CZ. The values of K 1 related to the interface type, oxidizing or non-oxidizing (Si02 or Si3N4).


Reverse Modeling Interface Type CMOS Device Arrhenius Expression Surface Recombination Rate 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Eitan N Shauly
    • 1
  • Richard Ghez
    • 2
  • Yigal Komem
    • 2
  1. 1.Faculty of Materials EngineeringTECHNION-Israel Institute of TechnologyHaifaIsrael
  2. 2.TECHNION-Israel Institute of Technology Haifa 36000Faculty of Materials EngineeringIsrael

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