Device Simulation and Measurement of Hybrid SBTT
A hybrid Schottky barrier tunneling transistor is assessed by device simulations and measurements. n+ regions are formed in Schottky contact regions of source and drain. The unified simulation technique is used to simulate ohmic and Schottky contact natures. The devices are fabricated by utilizing the conventional extension process. It is shown that potential modulation by n+ regions reduces drain leakage current and enhance the tunneling probability at the source contract.
KeywordsGate Voltage Depletion Region Schottky Contact Tunneling Probability Device Simulation
Unable to display preview. Download preview PDF.