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Device Simulation and Measurement of Hybrid SBTT

  • K. Matsuzawa
  • K. Uchida
  • A. Nishiyama
  • T. Numata
  • M. Noguchi
Conference paper

Abstract

A hybrid Schottky barrier tunneling transistor is assessed by device simulations and measurements. n+ regions are formed in Schottky contact regions of source and drain. The unified simulation technique is used to simulate ohmic and Schottky contact natures. The devices are fabricated by utilizing the conventional extension process. It is shown that potential modulation by n+ regions reduces drain leakage current and enhance the tunneling probability at the source contract.

Keywords

Gate Voltage Depletion Region Schottky Contact Tunneling Probability Device Simulation 
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References

  1. [1]
    Tucker, J.R., Chinlee Wang, Carney, P.S. Silicon field-effect transistor based on quantum tunneling. Appl. Phys. Lett. 1994; 65: 618–620CrossRefGoogle Scholar
  2. [2]
    Matsuzawa, K., Uchida, K., Nishiyama, A. A, unified simulation of Schottky and ohmic contacts. IEEE Trans. Electron Devices 2000; 47: 103–108CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • K. Matsuzawa
    • 1
  • K. Uchida
    • 1
  • A. Nishiyama
    • 1
  • T. Numata
    • 1
  • M. Noguchi
    • 2
  1. 1.Advanced LSI Technology Laboratory, Toshiba Corporation 8Shinsugita-choIsogo-kuJapan
  2. 2.Toshiba CorporationSemiconductor Company

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