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Theoretical Calculation of a Charged Particle Detector’s Response Fabricated by Semi Insulating (SI) GaAs

  • Vasilios G Theonas
  • G. Papaioannou
Conference paper

Abstract

In the present work we have conducted theoretical calculations of the transient response of SI GaAs radiation detectors. The detector under consideration is a typical reverse biased Schottky diode of high purity undopped GaAs or compensated material. The electrical characteristics of the “dark” equilibrium state, derived by the Poisson and continuity equations, indicate that in the compensated detector is established a wider active region [1]. We considered that the detector operates in pulse or current mode. In pulse mode, a single charged particle (i.e. proton, a—particle) incidents the detector on either the Schottky or ohmic contact, whereas in current mode the detector is irradiated by a short-lived particle beam.

Keywords

Current Pulse Ohmic Contact Schottky Contact Induce Charge Back Irradiation 
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References

  1. [1]
    V. Theonas et al, XVI Greek Conference on Solid State Physics Proceedings Volume 1 (2000) 510-513Google Scholar
  2. [2]
    J. F. Ziegler, J. P. Biersack and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1985 (new edition in late 1996).Google Scholar
  3. [3]
    J.W.Chen et al, Nuclear Instruments and Methods in Physics Research A 365, (1995) 273-284Google Scholar
  4. [4]
    T.E.Schlesinger¡ªR.B.James Semiconductors for Room Temperature Nuclear Detector Applications, Semiconductors and Semimetals V.43, Academic Press (1995)Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Vasilios G Theonas
    • 1
    • 1
  • G. Papaioannou
    • 1
    • 1
  1. 1.Solid State Physics Section Panepistimiopolis ZografosUniversity of AthensAthensGreece

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