Level Set Modeling of Profile Evolution During Deposition Process

Abstract

In this paper, we report three-dimensional modeling of the sputter deposition process for ULSI interconnects. The numerical method in this work is based upon the level-set scheme for accurately tracking the moving boundaries of the deposited profiles. A new approach is proposed in an effort to reduce thecalculating CPU time during the calculating step of the deposition rate. Our simulation incorporates three-dimensional direct and/or indirect flux distributions and shadow-effects as well as the dependence of sticking coefficient that affects not only the thickness of film at different position but also the initiation of the creation of a void. In this work, we present several numerical examples for copper deposition process, which include L-shaped trenches and contact holes with different aspect ratios.