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Level Set Modeling of Profile Evolution During Deposition Process

  • Ohseob Kwon
  • Taeyoung Won
Conference paper

Abstract

In this paper, we report three-dimensional modeling of the sputter deposition process for ULSI interconnects. The numerical method in this work is based upon the level-set scheme for accurately tracking the moving boundaries of the deposited profiles. A new approach is proposed in an effort to reduce thecalculating CPU time during the calculating step of the deposition rate. Our simulation incorporates three-dimensional direct and/or indirect flux distributions and shadow-effects as well as the dependence of sticking coefficient that affects not only the thickness of film at different position but also the initiation of the creation of a void. In this work, we present several numerical examples for copper deposition process, which include L-shaped trenches and contact holes with different aspect ratios.

Keywords

Aspect Ratio Deposition Rate Thickness Ratio Surface Patch Sticking Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Reference

  1. E. Bar and 1. Lorenz, Proc. SISPAD ’99, 75 (1999).Google Scholar
  2. 1. A. Sethian, Level Set Methods (Cambridge University Press, USA, 1996).Google Scholar
  3. Youngchan Ban,, 1. Korean Phys.Soc., 35, S829 (1999).Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Ohseob Kwon
    • 1
  • Taeyoung Won
    • 1
  1. 1.School of Electrical and Computer EngineeringInha UniversityInchon, Korea

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