Differences Between Quantum-Mechanical Capacitance-Voltage Simulators
We present an extensive benchmarking comparison of an ensemble of the most advanced quantum-mechanical (QM) capacitance-voltage (CV) simulators available. Quantitative differences in the accumulation capacitance of p-channel and n-channel devices as large as 20% are found in a systematic comparison. Some of the underlying physics and models that lead to the observed differences are described.
KeywordsGate Dielectric Gate Length Accumulation Capacitance IEEE Electron Device Effective Oxide Thickness
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- C.A. Richter, A. Hefner, and E.M. Vogel, IEEE Electron Device Letters 22, pp. 35-37 (2001).Google Scholar
- www-devices.eecs.berkeley.edu/=kjyang/gmcv/index.html. Google Scholar
- R. Lake, et al., J. Appl. Phys. 81 7845-7869, 1997. D.K. Blanks, et al., Proc. IEEE 24th Int. Sym. on Compound Semiconductors (IEEE, New York, 1998) pp. 639-642.Google Scholar
- J.R. Hauser and K. Ahmed, in Characterization and Metrology for ULSI Technology Seiler, et al., eds. (AIP, Woodbury, NY 1998) pp. 235-239, 1998. and W.K. Henson, et al., IEEE Electron Device Lett. 20, 179-181, 1999.Google Scholar
- W-K Shih, et al., UTQUANT 2.0 User's Guide. Austin, TX: Univ. Texas, Oct. 1997.Google Scholar
- SCHRED was obtained from PUNCH, the Purdue University Network Computing Hubs; http://punch.ecn.purdue.edu
- S.-H. Lo, D.A. Buchanan, and Y. Taur, IBM J. Res and Devp. 43, 327-337 (1'999).Google Scholar
- E.M. Vogel and C.A. Richter, unpublished.Google Scholar
- A minimum mesh of the silicon lattice constant (0.271547 nm) is most physically realistic and gives consistent results for NEMO.Google Scholar
- S. Mudanai, et al., IEEE Electron Device Letters 22, pp. 145-147 (2001).Google Scholar