Abstract
We present an extensive benchmarking comparison of an ensemble of the most advanced quantum-mechanical (QM) capacitance-voltage (CV) simulators available. Quantitative differences in the accumulation capacitance of p-channel and n-channel devices as large as 20% are found in a systematic comparison. Some of the underlying physics and models that lead to the observed differences are described.
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Richterz, C.A., Vogel, E.M., Hodge, A.M., Hefner, A.R. (2001). Differences Between Quantum-Mechanical Capacitance-Voltage Simulators. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_77
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_77
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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