Differences Between Quantum-Mechanical Capacitance-Voltage Simulators

  • C. A. Richterz
  • E. M. Vogel
  • A. M. Hodge
  • A. R. Hefner


We present an extensive benchmarking comparison of an ensemble of the most advanced quantum-mechanical (QM) capacitance-voltage (CV) simulators available. Quantitative differences in the accumulation capacitance of p-channel and n-channel devices as large as 20% are found in a systematic comparison. Some of the underlying physics and models that lead to the observed differences are described.


Gate Dielectric Gate Length Accumulation Capacitance IEEE Electron Device Effective Oxide Thickness 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • C. A. Richterz
    • 1
  • E. M. Vogel
    • 1
  • A. M. Hodge
    • 1
  • A. R. Hefner
    • 1
  1. 1.Semiconductor Electronics DivisionNational Institute of Standards and TechnologyGaithersburgUSA

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