A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures
A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced Octree algorithm was used for spatial decomposition. A new trajectory replication scheme was developed and implemented to enhance computational efficiency. More than two orders of magnitude savings on CPU time have been achieved.
KeywordsGate Oxide Model Trajectory Replication Scheme Replication Error Semiconductor Process
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