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A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

  • Di Li
  • Geng Wang
  • Yang Chen
  • Gaurav Shrivastav
  • Stimit Oak
  • Al Tasch
  • Sanjay Banerjee
Conference paper

Abstract

A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced Octree algorithm was used for spatial decomposition. A new trajectory replication scheme was developed and implemented to enhance computational efficiency. More than two orders of magnitude savings on CPU time have been achieved.

Keywords

Gate Oxide Model Trajectory Replication Scheme Replication Error Semiconductor Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    B. Obradovic, etc, IEDM 1998 Technical Digest, 513.Google Scholar
  2. [2]
    G. F. Carey, etc. “Computer Simulation of Semiconductor Processes and Devices-- Mathematical and Numerical Aspects”, John Wiley and Sons, 1996.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Di Li
    • 1
  • Geng Wang
    • 1
  • Yang Chen
    • 1
  • Gaurav Shrivastav
    • 1
  • Stimit Oak
    • 1
  • Al Tasch
    • 1
  • Sanjay Banerjee
    • 1
  1. 1.Microelectronics Research CenterUniversity of Texas at Austin AustinUSA

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