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The modeling of a SOI microelectromechanical sensor

  • C. Ravariu’
  • F. Ravariu
  • A. Rusu’
  • D. Dobrescu’
  • L. Dobrescu’

Abstract

The goal of this paper is to model a SOI pressure sensor based on piezoelectric effect. A PZT film deposited onto a SOI wafer acts like the transistor’s gate. The transducer element is an SOI-MOSFET. The electrical simulation made with ATLAS presents the static characteristics of the device. An analytical model for sensitivities was presented to offer a designing rule. Mechanical simulations with ANSYS establish some mechanical characteristics.

Keywords

Pressure Sensor Piezoelectric Layer Mechanical Simulation Transducer Element Nodal Solution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Sze S.M. Semiconductor sensors, John Wiley&Sons Inc., 1995, pp 104-111.Google Scholar
  2. [2] Ravariu C et all, IEEE Int. Conf. on Modeling and Simulation of Microsystems, MSM’2000, San Diego, S.U.A., pp 404-407.Google Scholar
  3. [3] *** Philips Data Handbook, 1970, pp G9.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • C. Ravariu’
    • 1
  • F. Ravariu
    • 2
  • A. Rusu’
    • 1
  • D. Dobrescu’
    • 1
  • L. Dobrescu’
    • 1
  1. 1.“Politehnica” University of Bucharest _ Faculty of Electronics and Telecommunications 313Splaiul IndependenteiRomania
  2. 2.Institute for Research and Development in MicrotechnologiesRomania

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