The modeling of a SOI microelectromechanical sensor
The goal of this paper is to model a SOI pressure sensor based on piezoelectric effect. A PZT film deposited onto a SOI wafer acts like the transistor’s gate. The transducer element is an SOI-MOSFET. The electrical simulation made with ATLAS presents the static characteristics of the device. An analytical model for sensitivities was presented to offer a designing rule. Mechanical simulations with ANSYS establish some mechanical characteristics.
KeywordsPressure Sensor Piezoelectric Layer Mechanical Simulation Transducer Element Nodal Solution
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