Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width
On the basis of careful selection and calibration of model parameters we performed process and subsequent device simulation on WEB bipolar transistors. As a result, we concluded, that the mechanical stresses may be responsible for the measured varying device DC characteristics with emitter contact window width.
KeywordsSilicon Nitride Bipolar Transistor Current Gain Doping Profile Dopant Diffusion
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- Fu J., S. Mijalkovic, W. J. Eysenga, H. W. van Zeijl, and W. Crans (2000): The Influence of Mechanical Stresses on the Characteristics of Bipolar Transistors. In: Proceedings of Semiconductor Advances for Future Electronics 2000 (SAFE 2000), Veldhoven, the NetherlandsGoogle Scholar
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