Abstract
On the basis of careful selection and calibration of model parameters we performed process and subsequent device simulation on WEB bipolar transistors. As a result, we concluded, that the mechanical stresses may be responsible for the measured varying device DC characteristics with emitter contact window width.
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References
Fu J., S. Mijalkovic, W. J. Eysenga, H. W. van Zeijl, and W. Crans (2000): The Influence of Mechanical Stresses on the Characteristics of Bipolar Transistors. In: Proceedings of Semiconductor Advances for Future Electronics 2000 (SAFE 2000), Veldhoven, the Netherlands
Fu J., W. J. Eysenga, and W. Crans (2001): Calibration of model parameters for process simulation on dopant ion implant and diffusion by using Inverse Modelling method. In: Proceedings of Semiconductor Advances for Future Electronics 2001 (SAFE 2001), Veldhoven, the Netherlands (to be published)
Klaassen D. B. M., J. W. Slotboom, and H. C. de Graaff (1992): Unified apparent bandgap narrowing in n-and p-type silicon. Solid-State Electronics. 35: 125–129
Law M. E., E. Solley, M. Liang, and Dorothea E. Burk (1991): Self-consistent model of minority-carrier lifetime, diffusion length, and mobility. IEEE Electron device letters. 12: 401–403
Mijalkovic S. (2000): A piecewise linear Galerkin approach to stress analysis of nearly incompressible materials. Communications in Numerical Methods in Engineering. 16: 537–543
Nanver, L. K., E. J. G. Goudena, and H. W. van Zeijl (1996): Optimization of fully-implanted NPN’s for high-frequency operation. IEEE transactions on electron devices. 43: 1038–1040
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© 2001 Springer-Verlag Wien
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Fu, J., Mijalkovic, S., Eysenga, W.J., Crans, W. (2001). Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_69
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_69
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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