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Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width

  • J. Fu
  • S. Mijalkovic
  • W. J. Eysenga
  • W. Crans
Conference paper

Abstract

On the basis of careful selection and calibration of model parameters we performed process and subsequent device simulation on WEB bipolar transistors. As a result, we concluded, that the mechanical stresses may be responsible for the measured varying device DC characteristics with emitter contact window width.

Keywords

Silicon Nitride Bipolar Transistor Current Gain Doping Profile Dopant Diffusion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • J. Fu
    • 1
  • S. Mijalkovic
    • 1
  • W. J. Eysenga
    • 1
  • W. Crans
    • 1
  1. 1.Delft Institute of Microelectronics and Submicron Technology (DIMES)DelftThe Netherlands

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