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Bipolar Transistor’s Intrinsic and Extrinsic Capacitance Determination

  • B. Ardouin
  • T. Zimmer
  • H. Mnif
  • P. Fouillat
  • D. Berger
  • D. Céli

Abstract

We present a new method to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of bipolar transistors as a function of junction bias. The capacitance specific compact model parameters (pp, V,y) can be extracted for the intrinsic as well as for extrinsic part. The results can be introduced in recent compact bipolar models.

Keywords

Bipolar Transistor Parameter Extraction Base Resistance Junction Capacitance Junction Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    [] Schroter M. Hicum bipolar transistor model, available on the web:http://www.iee.ettudresden.dehee/eb/comp_mod.html.
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    [] Mc Andrew C, Seitchik J, Bowers D, Dunn M, Foisy M, Getreu I, McSwain M, Moinian S, Parker J, Roulston D, Schröter M, W jnen P, Wagner L, VBIC95, the vertical bipolar Inter-company model, IEEE J. of sol. state cir., vol 31, N° 10, October 1996.Google Scholar
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    [] Berger D, Gambetta N, Cell D, Dufaza C, Extraction of the base-collector capacitance splitting along the base resistance, BCTM, Minneapolis, September 24–26, 2000.Google Scholar
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    [] Lee T. Z, Schroter M, presentation to the compact modelling council -The Hicum bipolar model: methodology for bipolar model parameter extraction, available on the web: http://www.eigroup.org/cmc/bipolar/default.htm.

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • B. Ardouin
    • 1
  • T. Zimmer
    • 1
  • H. Mnif
    • 1
  • P. Fouillat
    • 2
  • D. Berger
    • 2
  • D. Céli
    • 2
  1. 1.Laboratoire de Microélectronique IXLUniversity of BordeauxTalence CedexFrance
  2. 2.ST MicroelectronicsFrance

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