Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation

  • V. Axelrad
  • Y. Huh
  • J. W. Chen
  • P. Bendix


Standard salicided MOSFETs have been repeatedly shown to have inferior ESD protection properties in comparison to salicide-blocked MOSFETs. Standard explanations typically attribute this to shallower current flow and higher peak current density in salicided devices due to the higher conductivity of salicides. In this work we present a numerical analysis of the phenomenon using physical mixed-mode circuit-device simulation. Our results show that the inherent lack of thickness uniformity known to exist in salicide layers can lead to local concentration of current flow and thus local failure of the device.


Breakdown Curve Inherent Lack Finger Performance Good Heat Dissipa High Peak Current Density 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • V. Axelrad
    • 1
  • Y. Huh
    • 1
  • J. W. Chen
    • 2
  • P. Bendix
    • 2
  1. 1.SEQUOIA Design SystemsWoodsideUSA
  2. 2.Santa ClaraLSI Logic Corp.USA

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