Accounting for Quantum Effects and Polysilicon Depletion in an Analytical Design-Oriented MOSFET Model

  • Matthias Bucher
  • Jean-Michel Saliese
  • Christophe Laliement


An analytical MOSFET model is presented that accounts for energy quantization in inversion charge and depletion in the poly gate. The model consistently describes effects on charges, transcapacitances, drain current and transconductances in all regions of operation, depending on five physical device parameters and bias conditions. Compari-son to experimental data is provided and parameter extraction briefly discussed. The model offers manageable equations providing insight into the physical phenomena, thereby supporting analog circuit design practice as well as efficient circuit simulation.


Gate Voltage Drain Current Strong Inversion Gate Capacitance Inversion Charge 


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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Matthias Bucher
    • 1
  • Jean-Michel Saliese
    • 2
  • Christophe Laliement
    • 3
  1. 1.National Technical University of AthensNTUAAthensGreece
  2. 2.Swiss Federal Institute of TechnologyEPFLLausanneSwitzerland
  3. 3.Erm-Phase /EnspsStrasbourgIllkirchFrance

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