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Tcad Driven Process Design of 0.15μm Fully-Depleted Soi Transistor for Low Power Applications

  • N. Miura
  • H. Hayashi
  • H. Komatsubara
  • M. Mochizuki
  • H. Matsuhashi
  • Y. Kajita
  • K. Fukuda
Conference paper

Abstract

We presented a TCAD-driven total design methodology of FD-SOI MOSFETs, starting from 0.35µm/2.5V shrinking to 0.15µm/1.5V. Jumping from 0.351.1m to 0.15µm, two-phase experiments are performed effectively supported by exhaustive applications of TCAD local models. SOI specific consideration of SOI film thickness variations (oTsoi) and floating-body effects are the key points for the TCAD driven strategy.

Keywords

Short Channel Effect Response Surface Function Supply Voltage Reduction SIMOX Wafer Exhaustive Application 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Mar, J. (1996): The Application of TCAD in Industry. In: Proceedings of International Conference on Simulation of Semiconductor Process and Devices, SISPAD’ 96, Tokyo. Japan Society of Applied Physics, Tokyo, pp.139–145Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • N. Miura
    • 1
  • H. Hayashi
    • 1
  • H. Komatsubara
    • 1
  • M. Mochizuki
    • 1
  • H. Matsuhashi
    • 1
  • Y. Kajita
    • 1
  • K. Fukuda
    • 1
  1. 1.VLSI Research CenterOki Electric Industry Co.TokyoJapan

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