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Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs

  • Jaehee Lee
  • Woo-Seock Cheong
  • Jae-Hoon Choi
  • Jae-Chul Om
Conference paper

Abstract

We report on the enhanced diffusion characteristics of phosphorus in SEG(selective epitaxial growth)-MOSFETs due to in-diffusion from BPSG (borophosphosilicate glass) layer. Because of structural complexity of SEGMOSFETs, three-dimensional simulation was implemented and our results successfully show that a great deal of impurity in-diffusion from BPSG to silicon layer generates a lot of interstitial. Therefore, the diffusivity of phosphorus is increased dramatically by TED effect, causing the characteristics of SEGMOSFETs is degraded severely.

Keywords

Segregation Coefficient Short Channel Effect Phosphorus Diffusion High Boron Concentration NMOS Device 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Jaehee Lee
    • 1
  • Woo-Seock Cheong
    • 1
  • Jae-Hoon Choi
    • 2
  • Jae-Chul Om
    • 2
  1. 1.Device Physics and Modeling TeamHynix Semiconductor IncKorea
  2. 2.2Advanced Process Team 3 Memory R&D DivisionHynix Semiconductor IncKorea

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