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A New Compact Spice-like Model of E2PROM Memory Cells Suitable for DC and Transient Simulations

  • L. Larcher
  • P. Pavan
  • M. Cuozzo
  • A. Marmiroli

Abstract

This paper presents for the first time a new compact Spice-like model of a E2PROM Memory Cells suitable for both DC and transient circuit simulations. This model is based on a new Floating Gate voltage calculation procedure that improves strongly the accuracy of the modeling of the cell. Moreover, this model features many advantages compared to the previous ones: i) it is simple to implement and scale; ii) its computational time is not critical; iii) its parameter extraction procedure is the same of a MOS transistor; iv) it can be easily upgraded to take into account leakage current contributions (SILC).

Keywords

Control Gate Threshold Voltage Shift Floating Gate Oxide Field Control Voltage Source 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    R. Duane, A. Concannon, P. O’Sullivan, A. Mathewson (1998): Advanced numerical modelling of non-volatile memory cells. In Proceedings of the European Solid-State Device Research Conference, ESSDERC’98, Bordeaux, France. Edition Forntieres, pp. 304–307Google Scholar
  2. 2.
    L. Larcher, P. Pavan, F. Pellizzer, G. Ghidini (2001): A new model of gate capacitance as a simple tool to extract MOS parameters. IEEE Trans. Electron Dev. 48: 935–945CrossRefGoogle Scholar
  3. 3.
    P. Pavan, R. Bez, P. Olivo, E. Zanoni (1997): Flash memory cells — An overview“. In Proceedings of the IEEE, 85, pp.1248–1271CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • L. Larcher
    • 1
  • P. Pavan
    • 1
  • M. Cuozzo
    • 2
  • A. Marmiroli
    • 2
  1. 1.D.S.I. and INFMUniversità di Modena e Reggio EmiliaModenaItaly
  2. 2.STMicroelectronicsAgrate BrianzaItaly

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