Abstract
This paper presents for the first time a new compact Spice-like model of a E2PROM Memory Cells suitable for both DC and transient circuit simulations. This model is based on a new Floating Gate voltage calculation procedure that improves strongly the accuracy of the modeling of the cell. Moreover, this model features many advantages compared to the previous ones: i) it is simple to implement and scale; ii) its computational time is not critical; iii) its parameter extraction procedure is the same of a MOS transistor; iv) it can be easily upgraded to take into account leakage current contributions (SILC).
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
R. Duane, A. Concannon, P. O’Sullivan, A. Mathewson (1998): Advanced numerical modelling of non-volatile memory cells. In Proceedings of the European Solid-State Device Research Conference, ESSDERC’98, Bordeaux, France. Edition Forntieres, pp. 304–307
L. Larcher, P. Pavan, F. Pellizzer, G. Ghidini (2001): A new model of gate capacitance as a simple tool to extract MOS parameters. IEEE Trans. Electron Dev. 48: 935–945
P. Pavan, R. Bez, P. Olivo, E. Zanoni (1997): Flash memory cells — An overview“. In Proceedings of the IEEE, 85, pp.1248–1271
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2001 Springer-Verlag Wien
About this paper
Cite this paper
Larcher, L., Pavan, P., Cuozzo, M., Marmiroli, A. (2001). A New Compact Spice-like Model of E2PROM Memory Cells Suitable for DC and Transient Simulations. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_58
Download citation
DOI: https://doi.org/10.1007/978-3-7091-6244-6_58
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
eBook Packages: Springer Book Archive