A New Compact Spice-like Model of E2PROM Memory Cells Suitable for DC and Transient Simulations
This paper presents for the first time a new compact Spice-like model of a E2PROM Memory Cells suitable for both DC and transient circuit simulations. This model is based on a new Floating Gate voltage calculation procedure that improves strongly the accuracy of the modeling of the cell. Moreover, this model features many advantages compared to the previous ones: i) it is simple to implement and scale; ii) its computational time is not critical; iii) its parameter extraction procedure is the same of a MOS transistor; iv) it can be easily upgraded to take into account leakage current contributions (SILC).
KeywordsControl Gate Threshold Voltage Shift Floating Gate Oxide Field Control Voltage Source
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