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Comparison of finite element stress simulation with X-ray measurement for the aluminum conductors with different passivation topography

  • Tai-Kyung Kim
  • Young-Pil Kim
  • Won-Young Chung
  • Young-Kwan Park
  • Jeong-Taek Kong
Conference paper

Abstract

This paper evaluates the dependence of the thermal stresses of aluminum conductors and Si02 layers deposited by several different processes using the finite element method(FEM) and topography simulation. The results of topography simulation for four different deposition processes agree well with scanning electron microscopes and subsequent FEM stress simulations are compared with X-ray diffraction measurement data. Simulation results show that the different stresses are created in aluminum lines from different passivation processes. Especially, the stresses of aluminum lines decrease as the encapsulation of aluminum conductors by the oxide layer with void profiles decrease. Through this topography simulation followed by stress simulations for different deposition processes, we can systematically define the failure mechanisms of aluminum lines for various passivation processes.

Keywords

Deposition Process Passivation Layer Passivation Process Metal Line High Tensile Stress 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Tai-Kyung Kim
  • Young-Pil Kim
    • 1
  • Won-Young Chung
  • Young-Kwan Park
  • Jeong-Taek Kong
  1. 1.Semiconductor R&D CenterSamsung Electronics CoNongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-DoKorea

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