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Modeling the Impact of Body-to-body Leakage in Partially-Depleted SOI CMOS Technology

  • MeiKei Ieong
  • Ralph Young
  • Heemyong Park
  • Werner RanusIsabel Yang
  • Samuel Fung
  • Fariborz Assaderaghi
  • Fariborz AssaderaghiWong
  • H-S Philip Wong

Abstract

We study the impact of body-to-body leakage on the performance of partially-depleted silicon-on-insulator (SOI) CMOS technology using TCAD. The body-to-body leakage could be significant because of aggressive technology scaling as shown by process simulations. A fifteen percent degradation in overall delay time is observed by device and mixed-mode circuit simulations. Numerical junction leakage models for accurate body potential modeling are also discussed.

Keywords

CMOS Technology Body Effect NAND Gate Diode Current Junction Capacitance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • MeiKei Ieong
    • 1
  • Ralph Young
    • 1
  • Heemyong Park
    • 1
  • Werner RanusIsabel Yang
    • 1
    • 1
  • Samuel Fung
    • 1
  • Fariborz Assaderaghi
    • 1
  • Fariborz AssaderaghiWong
    • 2
  • H-S Philip Wong
    • 2
  1. 1.IBM SRDCHopewell Junction
  2. 2.IBM T.J. Watson Research CenterYorktown HeightsUSA

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