Modeling the Impact of Body-to-body Leakage in Partially-Depleted SOI CMOS Technology
We study the impact of body-to-body leakage on the performance of partially-depleted silicon-on-insulator (SOI) CMOS technology using TCAD. The body-to-body leakage could be significant because of aggressive technology scaling as shown by process simulations. A fifteen percent degradation in overall delay time is observed by device and mixed-mode circuit simulations. Numerical junction leakage models for accurate body potential modeling are also discussed.
KeywordsCMOS Technology Body Effect NAND Gate Diode Current Junction Capacitance
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