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Monte Carlo Simulation of Multi-band Carrier Transport in Semiconductor Materials with Complex Unit Cells

  • H-E. Nilsson
  • A. Martinez
  • M. Hjelm.
  • E. Bellotti
  • K. Brennan
Conference paper

Abstract

In a traditional Monte Carlo (MC) model the carrier preserves its band identity during the free flight between scatterings. However, this assumption may not be valid in semiconductor materials with complex unit cell. A new model is needed where the traditional way to use classical equations during the free flight between scattering is replaced by a fully quantum mechanical model of the Bloch carrier dynamics between scattering events. In this work we present such a model along with simulated results of the hole initiated impact ionization coefficients of 4H-SiC.

Keywords

Monte Carlo Monte Carlo Model Free Flight Homogeneous Electric Field Optical Phonon Scattering 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    J. Kolnik et al. (1996): Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN, J. Appl. Phys., 79: pp. 8838–8840CrossRefGoogle Scholar
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • H-E. Nilsson
    • 1
  • A. Martinez
    • 2
  • M. Hjelm.
    • 1
    • 2
  • E. Bellotti
    • 3
  • K. Brennan
    • 4
  1. 1.Dept. of Information Technology and MediaMid Sweden University
  2. 2.Dept. of Electronics, KunglTekniska Högskolan, Electrum 229
  3. 3.Electrical & Computer Engineering Dept.Boston UniversityBostonUSA
  4. 4.School of Electrical and Computer EngineeringGeorgia Tech AtlantaUSA

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