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Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in Gaas Mesfets

  • A. Wakabayashi
  • Y. Mitani
  • D. Kasai
  • K. Horio
Conference paper

Abstract

Two-dimensional simulation of turn-on characteristics of GaAs MESFETs is performed in which surface states and impact ionization of carriers are considered. It is shown that the gate-lag (or the slow current transient) becomes weaker when including the impact ionization. This is attributed to the fact that the potential profiles along the surface is drastically changed when the surface states capture holes that are generated by impact ionization. The relation between the gate-lag and the so-called kink phenomenon is also discussed.

Keywords

Surface State Impact Ionization Potential Profile Drain Voltage Deep Acceptor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Horio K, Yamada T. IEEE Trans. Electron Devices 1999; 46: 648-655CrossRefGoogle Scholar
  2. [2]
    Horio K, Wakabayashi A, Yamada T. IEEE Trans. Electron Devices 2000; 47: 617-624CrossRefGoogle Scholar
  3. [3]
    Horio K, Satoh K. IEEE Trans. Electron Devices 1994; 41: 2256-2261CrossRefGoogle Scholar
  4. [4]
    Wilson MR et al. Proceedings of GaAs IC Symposium. IEEE, 1995, pp.109-112Google Scholar
  5. [5]
    Horio K, Wakabayashi A. IEEE Trans. Electron Devices 2000; 47: 2270-2276CrossRefGoogle Scholar
  6. [6]
    Spicer WE et al. J. Vac. Sci. Technol. 1979; 16: 1422-1433Google Scholar
  7. [7]
    Wieder HH.Surface Sci. 1983; 132: 390-405CrossRefGoogle Scholar
  8. [8]
    Bulman GE et al.IEEE Electron Device Lett. 1983; EDL-4: 181-185Google Scholar
  9. [9]
    Parker AE, Root DE. Proceedings of ISSSE'98. URSI, 1998, pp.444-449Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. Wakabayashi
    • 1
  • Y. Mitani
    • 1
  • D. Kasai
    • 1
  • K. Horio
    • 1
  1. 1.Faculty of Systems EngineeringShibaura Institute of Technology 307 FukasakuOmiyaJapan

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