Abstract
Modem CMOS technologies are becoming increasingly attractive for RF applications.This imposes stringent requirements on compact models used in circuit simulation: not only currents and charges, but also noise, power gain, impedances, and harmonic distortion must be modelled accurately. In this paper several of these issues will be addressed with the help of Philips’ new public-domain compact MOS model, MOS Model 11.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
H.S. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, T. Morimoto, Y. Katsumata, and H. Iwai, IEDM’96, p. 105.
E. Morifuji, H.S. Momose, T. Ohguro, T. Yoshitomi, H. Kimijima, F. Matsuoka, M. Kinugawa, Y. Katsumata,and H. Iwai,1999 VLSI Symp., p.163.
P.H. Woerlee, R. van Langevelde, A.H. Montree, D.B.M. Klaassen, L.F. Tiemeijer, and P.W.H. de Vreede, ESSDERC 2000, p. 576.
D.B.M. Klaassen, R. van Langevelde, A.J. Scholten and L.F. Tiemeijer, ESSDERC’99, p. 95.
L.F. Tiemeijer, L.M.F. de Maaijer, R. van Langevelde, A.J. Scholten, and D.B.M. Klaassen, Proc. AACD’99, p.129.
Y. Cheng, M. Schröter, C. Enz, M. Matloubian, and D. Pehlke, ESSCIRC’98, p.416.
L.F. Tiemeijer, R. van Langevelde, O. Gaillard, R.J. Havens, P.G.M. Baltus, P.H. Woerlee, and D.B.M. Klaassen, ESSDERC 2000,p. 464.
B. Razavi, R.H. Yan, and K.F. Lee,IEEE Trans. on Circuits and Systems-I: Fundamental Theory and Applications 41, No. 11, p. 750 (1994).
R. Vanoppen, J.A.M. Geelen, and D.B.M. Klaassen, IEDM’94, p. 173.
L.F. Tiemeijer, and D.B.M. Klaassen, ESSDERC’98, p. 480.
R. van Langevelde, L.F. Tiemeijer, R.J. Havens, M.J. Knitel, R.F.M. Roes, P.H. Woerlee, and D.B.M. Klaassen, IEDM 2000, p. 807.
M. Schröter, D.R. Pehlke, and T-Y. Lee, ESSDERC’99, p. 476.
A.A. Abidi, IEEE Trans. El.Dev. 33, p. 1801 (1986).
P. Klein, IEEE El. Dev.Lett. 20, p. 399–401 (1999).
A.J. Scholten, H.J.Tromp, L.F. Tiemeijer, R. van Langevelde, R.J. Havens, P.W.H. de Vreede, R.F.M. Roes, P.H.Woerlee, A.H. Montree, and D.B.M.Klaassen, IEDM’99, p. 155.
F.M. Klaassen and J. Prins, Philips Res.Repts. 22, p. 504, (1967).
Y.P. TsividisOperation and modeling of the MOS transistorMcGraw-Hill Inc.(1987)
A. van der Ziel and E.R. Chenette, Adv. in El. and El.Phys46 p. 313 (1978).
J.S. Goo, S. Donati, C.H. Choi, Z. Yu, T.H. Lee, and R.W. Dutton, SISPAD 2001.
T. Smedes and F.M. Klaassen,Solid-State-Electronics38p. 121 (1995)
L.F. Tiemeijer, P.W.H. de Vreede, A.J. Scholten, and D.B.M. Klaassen, ESSDERC ’99, p. 652
M. Chan, K.Y. Hui, C. Hu, and P.K. Ko, IEEE Trans.Electron Dev. 45 p. 834 (1998).
A.J. Scholten, L.F. Tiemeijer, P.W.H. de Vreede, and D.B.M. Klaassen, IEDM’99, p. 163.
R. Gillon, D. Vanhoenacker, J.-P. Colinge, Proc. AACD’99, p.227.
G. GonzalesMicrowave transistor amplifiersPrentice Hall, 1997.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2001 Springer-Verlag Wien
About this paper
Cite this paper
Scholten, A.J., Langevelde, R.v., Tiemeijer, L.F., Havens, R.J., Klaassen, D.B.M. (2001). Compact MOS Modelling for RF CMOS Circuit Simulation. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_43
Download citation
DOI: https://doi.org/10.1007/978-3-7091-6244-6_43
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
eBook Packages: Springer Book Archive