Compact MOS Modelling for RF CMOS Circuit Simulation

  • A. J. Scholten
  • R. van Langevelde
  • L. F. Tiemeijer
  • R. J. Havens
  • D. B. M. Klaassen


Modem CMOS technologies are becoming increasingly attractive for RF applications.This imposes stringent requirements on compact models used in circuit simulation: not only currents and charges, but also noise, power gain, impedances, and harmonic distortion must be modelled accurately. In this paper several of these issues will be addressed with the help of Philips’ new public-domain compact MOS model, MOS Model 11.


Thermal Noise Noise Figure Power Gain Harmonic Distortion Gate Bias 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. J. Scholten
    • 1
  • R. van Langevelde
    • 1
  • L. F. Tiemeijer
    • 1
  • R. J. Havens
    • 1
  • D. B. M. Klaassen
    • 1
  1. 1.Philips Research Laboratories ProfEindhovenNetherlands

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