Advertisement

Compact MOS Modelling for RF CMOS Circuit Simulation

  • A. J. Scholten
  • R. van Langevelde
  • L. F. Tiemeijer
  • R. J. Havens
  • D. B. M. Klaassen

Abstract

Modem CMOS technologies are becoming increasingly attractive for RF applications.This imposes stringent requirements on compact models used in circuit simulation: not only currents and charges, but also noise, power gain, impedances, and harmonic distortion must be modelled accurately. In this paper several of these issues will be addressed with the help of Philips’ new public-domain compact MOS model, MOS Model 11.

Keywords

Thermal Noise Noise Figure Power Gain Harmonic Distortion Gate Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    H.S. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, T. Morimoto, Y. Katsumata, and H. Iwai, IEDM’96, p. 105.Google Scholar
  2. [2]
    E. Morifuji, H.S. Momose, T. Ohguro, T. Yoshitomi, H. Kimijima, F. Matsuoka, M. Kinugawa, Y. Katsumata,and H. Iwai,1999 VLSI Symp., p.163.Google Scholar
  3. [3]
    P.H. Woerlee, R. van Langevelde, A.H. Montree, D.B.M. Klaassen, L.F. Tiemeijer, and P.W.H. de Vreede, ESSDERC 2000, p. 576.Google Scholar
  4. [4]
    D.B.M. Klaassen, R. van Langevelde, A.J. Scholten and L.F. Tiemeijer, ESSDERC’99, p. 95.Google Scholar
  5. [5]
    L.F. Tiemeijer, L.M.F. de Maaijer, R. van Langevelde, A.J. Scholten, and D.B.M. Klaassen, Proc. AACD’99, p.129.Google Scholar
  6. [6]
    Y. Cheng, M. Schröter, C. Enz, M. Matloubian, and D. Pehlke, ESSCIRC’98, p.416.Google Scholar
  7. [7]
  8. [8]
  9. [9]
    L.F. Tiemeijer, R. van Langevelde, O. Gaillard, R.J. Havens, P.G.M. Baltus, P.H. Woerlee, and D.B.M. Klaassen, ESSDERC 2000,p. 464.Google Scholar
  10. [10]
    B. Razavi, R.H. Yan, and K.F. Lee,IEEE Trans. on Circuits and Systems-I: Fundamental Theory and Applications 41, No. 11, p. 750 (1994).CrossRefGoogle Scholar
  11. [11]
    R. Vanoppen, J.A.M. Geelen, and D.B.M. Klaassen, IEDM’94, p. 173.Google Scholar
  12. [12]
    L.F. Tiemeijer, and D.B.M. Klaassen, ESSDERC’98, p. 480.Google Scholar
  13. [13]
    R. van Langevelde, L.F. Tiemeijer, R.J. Havens, M.J. Knitel, R.F.M. Roes, P.H. Woerlee, and D.B.M. Klaassen, IEDM 2000, p. 807.Google Scholar
  14. [14]
    M. Schröter, D.R. Pehlke, and T-Y. Lee, ESSDERC’99, p. 476.Google Scholar
  15. [15]
    A.A. Abidi, IEEE Trans. El.Dev. 33, p. 1801 (1986).Google Scholar
  16. [16]
    P. Klein, IEEE El. Dev.Lett. 20, p. 399–401 (1999).Google Scholar
  17. [17]
    A.J. Scholten, H.J.Tromp, L.F. Tiemeijer, R. van Langevelde, R.J. Havens, P.W.H. de Vreede, R.F.M. Roes, P.H.Woerlee, A.H. Montree, and D.B.M.Klaassen, IEDM’99, p. 155.Google Scholar
  18. [18]
    F.M. Klaassen and J. Prins, Philips Res.Repts. 22, p. 504, (1967).Google Scholar
  19. [19]
    Y.P. TsividisOperation and modeling of the MOS transistorMcGraw-Hill Inc.(1987)Google Scholar
  20. [20]
    A. van der Ziel and E.R. Chenette, Adv. in El. and El.Phys46 p. 313 (1978).Google Scholar
  21. [21]
    J.S. Goo, S. Donati, C.H. Choi, Z. Yu, T.H. Lee, and R.W. Dutton, SISPAD 2001.Google Scholar
  22. [22]
    T. Smedes and F.M. Klaassen,Solid-State-Electronics38p. 121 (1995)CrossRefGoogle Scholar
  23. [23]
    L.F. Tiemeijer, P.W.H. de Vreede, A.J. Scholten, and D.B.M. Klaassen, ESSDERC ’99, p. 652Google Scholar
  24. [24]
    M. Chan, K.Y. Hui, C. Hu, and P.K. Ko, IEEE Trans.Electron Dev. 45 p. 834 (1998).CrossRefGoogle Scholar
  25. [25]
    A.J. Scholten, L.F. Tiemeijer, P.W.H. de Vreede, and D.B.M. Klaassen, IEDM’99, p. 163.Google Scholar
  26. [26]
    R. Gillon, D. Vanhoenacker, J.-P. Colinge, Proc. AACD’99, p.227.Google Scholar
  27. [27]
    G. GonzalesMicrowave transistor amplifiersPrentice Hall, 1997.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. J. Scholten
    • 1
  • R. van Langevelde
    • 1
  • L. F. Tiemeijer
    • 1
  • R. J. Havens
    • 1
  • D. B. M. Klaassen
    • 1
  1. 1.Philips Research Laboratories ProfEindhovenNetherlands

Personalised recommendations