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Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs

  • Ken’ichiro Sonoda
  • Motoaki Tanizawa
  • Katsumi Eikyu
  • Kiyoshi Ishikawa
  • Toshio Kumamoto
  • Hiroyuki Kouno
  • Masahide Inuishi
Conference paper

Abstract

Drain and gate bias dependent fluctuations of flicker noise of MOSFETs are explained in terms of carrier concentration distributions in a MOSFET channel. A proposed model well describes the increase of the fluctuation in the saturation region of operation. In addition, the gate bias dependence of the fluctuation in the saturation region can also be calculated using the model. Our model predicts that for any gate voltage change, the fluctuation in the saturation region will be 2-2.5 times that in the linear region.

Keywords

Phase Noise Saturation Region Flicker Noise Gate Bias Gate Area 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Ken’ichiro Sonoda
  • Motoaki Tanizawa
  • Katsumi Eikyu
  • Kiyoshi Ishikawa
  • Toshio Kumamoto
    • 1
  • Hiroyuki Kouno
    • 1
  • Masahide Inuishi
  1. 1.ULSI Development Center, System LSI Div.Mitsubishi Electric Corp., HyogoJapan

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