Abstract
Drain and gate bias dependent fluctuations of flicker noise of MOSFETs are explained in terms of carrier concentration distributions in a MOSFET channel. A proposed model well describes the increase of the fluctuation in the saturation region of operation. In addition, the gate bias dependence of the fluctuation in the saturation region can also be calculated using the model. Our model predicts that for any gate voltage change, the fluctuation in the saturation region will be 2-2.5 times that in the linear region.
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References
Brederlow, R., Weber, W., Landsiedel, D. S., Thewes, R. (1999): Fluctuations of the Low Frequency Noise of MOS Transistors and their Modeling in Analog and RF-Circuits. International Electron Devices Meeting Tech. Dig. pp. 159-162
Gray, P. R., Meyer, R. G. (1993): Analysis and Design of Analog Integrated Circuits. John Wily & Sons, New York
Hajimiri, A., Lee, T. H. (1998): A General Theory of Phase Noise in Electrical Oscillators. IEEE J. Solid-State Circ. 33: pp. 179-194
Hung, K. K., Ko, P. K., Hu, C., Cheng, Y. C. (1990): A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors. IEEE Trans. Electron Devices 37: pp. 654-665
Ko, P. K. (1989): Approaches to Scaling. In: Einspruch, N. G., Gildenblat, G. S. (eds.): VLSI Electronics Microstructure Science. Academic Press, San Diego, pp. 1-37 (Advanced MOS Device Physics, vol. 18)
Pelgrom, M. J. M., Duinmaijer, A. C. J., Welbers, A. P. G. (1989): Matching Properties of MOS Transistors. IEEE J. Solid-State Circ. 24: pp. 433-1440
Ziel, A. v. d., Park, H. S. (1979): A discrepancy in the elementary theory of MOSFET modeling. Appl. Phys. Lett. 35: pp. 942-944
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© 2001 Springer-Verlag Wien
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Sonoda, K. et al. (2001). Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_42
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_42
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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