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Simulation and Prediction of Aspect Ratio Dependent Phenomena during Si02 and Si Feature Etching in Fluorocarbon Plasmas

  • George Kokkoris
  • Evangelos Gogolides
  • G. Boudouvis Gogolides
Conference paper

Abstract

A simulator to calculate etching rates in Si02 and Si features in fluorocarbon plasmas has been developed. This simulator links the gas (plasma) phase composition with the etching rate inside features and it is used for predicting aspect ratio dependent phenomena during Si02 and Si feature etching.

Keywords

Etching Rate Flux Calculator Local Flux Etch Stop Trench Bottom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Kokkoris G., Gogolides E., Boudouvis A.G., `Etching of SiO2 and Si features in fluorocarbon plasmas. I: Effect of gas phase composition on aspect ratio dependent phenomena’, submitted for publication to J. Appl. Phys.Google Scholar
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    Kokkoris G., Gogolides E., Boudouvis A.G., `Etching of SiO2 and Si features in fluorocarbon plasmas. II: Explanation of aspect ratio dependent phenomena’, submitted for publication to J. Appl. Phys.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • George Kokkoris
    • 1
  • Evangelos Gogolides
    • 1
  • G. Boudouvis Gogolides
    • 2
  1. 1.National Center for Scientific Research “Demokritos”Institute of MicroelectronicsGreeceAthens
  2. 2.National Technical University of AthensDepartment of Chemical EngineeringGreeceAthens

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