Modeling of Reactive Ion Etching for Si/Si02Systems

  • S. Hamaguchi
  • H. Ohta
Conference paper


Molecular dynamics (MD) simulations have been used to study surface reaction dynamics of Si and Si02etching by halogens. To perform classical MD simulations for Si02 etching reaction by halogens (Cl or F), we have constructed new sets of two— and three—body interatomic potential functions based on potential energy data obtained fromab initioquantum mechanical calculations of the electronic states. Etching yields for Si and Si02targets are obtained from MD simulations for both beam etching and reactive ion etching (RIE). The obtained yields are in good agreement with experimental observations.


Molecular Dynamic Simulation Target Surface Si02 Target Molecular Dynamic Simulation Result Classical Molecular Dynamic Simulation 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • S. Hamaguchi
    • 1
  • H. Ohta
    • 1
  1. 1.Department of Fundamental Energy ScienceKyoto UniversityKyoto

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