Advertisement

3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER

  • Asen Asenov
Conference paper

Abstract

The need for statistical 3D simulations to study intrinsic parameter fluctuations in aggressively scaled MOSFETs introduced by discreteness of charge and atomicity of matter is discussed. We describe a hierarchical implementation of such a 3D `atomistic’ simulation approach, which includes quantum mechanical corrections based on the Density Gradient algorithm. Simulation examples of intrinsic parameter fluctuations associated with random discrete dopants in the active region of the device and in the polysilicon gate, oxide thickness fluctuation within the gate area, and line edge roughness (LER) of the gate are presented. We speculate about the challenges ahead in understanding and accurately simulating the atomistic effects in the next generation of MOSFETs.

Keywords

Threshold Voltage Oxide Thickness Atomistic Simulation Gate Oxide Gate Oxide Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    The International Technology Roadmap for Semiconductors, SIA, 1999 EditionGoogle Scholar
  2. [2]
    P. A. Packan, Pushing the limits, Science 1999; 285:2079Google Scholar
  3. [3]
    T. Mizuno, J. Okamura and A. Toriumi, Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET’s, IEEE Trans. Electron Devices 1994; 41:2216Google Scholar
  4. [4]
    H. S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, M. Sato, and H. Ivai, 1.5—nm direct-tunnelling gate oxide Si MOSFETs, IEEE Trans. Electron Devices 1996; 43:1233CrossRefGoogle Scholar
  5. [5]
    A. Asenov, A. R. Brown, J. H. Davies and S. Saini, Hierarchical approach to atomistic 3D MOSFET simulation, IEEE Trans. CAD Integ. Circuits Sys. 1999; 18:1558CrossRefGoogle Scholar
  6. [6]
    [] A. Asenov, Random dopant induced threshold voltage lowering and fluctuations in sub 0.1 micron MOSFETs: A 3D `atomistic’ simulation study, IEEE Trans. Electron Dev. 1998; 45:2505CrossRefGoogle Scholar
  7. [7]
    A. Asenov, S. Kaya, Effect of oxide roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxide, Proc. SISPAD 2000, p 135Google Scholar
  8. [8]
    C. S Rafferty, B. Biegel, Z. Yu, M. G. Ancona, J. Bude and R. W. Dutton, Multidimensional quantum effects simulation using a density-gradient model and script-level programming technique, in Proc SISPAD 1998, Eds. K. De Meyer and S. Biesemans, p 137Google Scholar
  9. [9]
    A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies and S. Saini, Increase in the random dopant induced threshold fluctuations and lowering in sub 100 nm MOSFETs due to quantum effects: A 3-D density-gradient simulation study, IEEE Trans. Electron Dev. 2001; 48:722CrossRefGoogle Scholar
  10. [10]
    G. H. Gilmer, L. Palaz, C. Rafferty and M. Jaraiz, Multiscale modeling of the implantation and annealing of silicon devices, in Proc SISPAD 1998, Eds. K. De Meyer and S. Biesemans, p 46Google Scholar
  11. [11]
    S. M. Goodnick, D. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, Surface roughness at the Si(100) - Si02 interface, Phys. Rev. 1985; B32: 8171Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Asen Asenov
    • 1
  1. 1.Department of Electronics and Electrical EngineeringUniversity of Glasgow Glasgow G12 8LTScotlandUK

Personalised recommendations