3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER

  • Asen Asenov
Conference paper


The need for statistical 3D simulations to study intrinsic parameter fluctuations in aggressively scaled MOSFETs introduced by discreteness of charge and atomicity of matter is discussed. We describe a hierarchical implementation of such a 3D `atomistic’ simulation approach, which includes quantum mechanical corrections based on the Density Gradient algorithm. Simulation examples of intrinsic parameter fluctuations associated with random discrete dopants in the active region of the device and in the polysilicon gate, oxide thickness fluctuation within the gate area, and line edge roughness (LER) of the gate are presented. We speculate about the challenges ahead in understanding and accurately simulating the atomistic effects in the next generation of MOSFETs.


Threshold Voltage Oxide Thickness Atomistic Simulation Gate Oxide Gate Oxide Thickness 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Asen Asenov
    • 1
  1. 1.Department of Electronics and Electrical EngineeringUniversity of Glasgow Glasgow G12 8LTScotlandUK

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