Abstract
We present a method of modeling quantum confinement effects in MOSFET’s by solving the Schrödinger, Boltzmann, Poisson and current-continuity equations self-consistently.
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© 2001 Springer-Verlag Wien
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Chung-Kuang, H., Neil, G. (2001). Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_33
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_33
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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