Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor
The article addresses the use of computational modelling during the equipment design and process development of the Planetary Reactor®, an industrial production scale multiwafer reactor for the MOCVD (Metalorganic Chemical Vapour Deposition) of epitaxial compound semiconductor thin films. MOCVD equipment and process simulation is based on the coupled computation of gas flow field, heat transfer, including rf induction and thermal radiation, and chemical species mass transport and reaction kinetics on 2D axisymmetric and 3D computational domains.
KeywordsMetal Organic Chemical Vapor Deposition Metalorganic Chemical Vapour Deposition Industrial Production Scale Growth Rate Distribution Thermal Radiation Transfer
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