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Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor

  • M. Dauelsberg
  • M. Deufel
  • M. Reinhold
  • G. Strauch
  • T. Begunde
Conference paper

Abstract

The article addresses the use of computational modelling during the equipment design and process development of the Planetary Reactor®, an industrial production scale multiwafer reactor for the MOCVD (Metalorganic Chemical Vapour Deposition) of epitaxial compound semiconductor thin films. MOCVD equipment and process simulation is based on the coupled computation of gas flow field, heat transfer, including rf induction and thermal radiation, and chemical species mass transport and reaction kinetics on 2D axisymmetric and 3D computational domains.

Keywords

Metal Organic Chemical Vapor Deposition Metalorganic Chemical Vapour Deposition Industrial Production Scale Growth Rate Distribution Thermal Radiation Transfer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice, 2nd edition, Academic Press, 1999Google Scholar
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    C.R. Kleijn, Chemical Vapor Deposition Processes, in: Computational Modeling. In: Semiconductor Processing, Ed. M. Meyyappan (Artech House, 1995) ch. 4, pp. 97–230Google Scholar
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    M. Dauelsberg et al., J. Crystal Growth 208 (2000) 85–92Google Scholar
  5. [5] CFD-ACE+ User manual, CFD Research Corporation, 215 Wynn Drive, Huntsville, AL 35805, USA.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • M. Dauelsberg
    • 1
  • M. Deufel
    • 1
  • M. Reinhold
    • 1
  • G. Strauch
    • 2
  • T. Begunde
    • 2
  1. 1.1KackertstrGermany
  2. 2.Ferdinand-Braun InstituteAlbert-Einstein-StrBerlin

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