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Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD

  • W. Pyka
  • C. Heitzinger
  • N. Tamaoki
  • T. Takase
  • T. Ohmine
  • S. Selberherr

Abstract

Experiments of As-doped poly-silicon deposition have shown that under certain process conditions step coverages > 1 can be achieved. We have developed a new model for the simulation of As-doped poly-silicon deposition, which takes into account surface coverage dependent sticking coefficients and surface coverage dependent As incorporation and desorption rates. The additional introduction of Langmuir type time-dependent surface coverage enabled the reproduction of the bottom-up filling of the trenches. In addition the rigorous treatment of the time-dependent surface coverage allows to trace the in-situ doping of the deposited film. Simulation results are shown for poly-Si deposition into 0.1 μm wide and 7 μm deep, high aspect ratio trenches.

Keywords

Surface Coverage Deposition Velocity Incorporation Rate Profile Evolution Sticking Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Reference

  1. [1]
    M. Radi, E. Leitner, and S. Selberherr,“AMIGOS: Analytical Model Interface & General Object-Oriented Solver,“ IEEE J. Technology Computer Aided Design, 1999.Google Scholar
  2. [2]
    W. Pyka, P. Fleischmann, B. Haindl, and S. Selberherr, “Three-Dimensional Simulation of HPCVD—Linking Continuum Transport and Reaction Kinetics with Topography Simulation,” IEEE Trans.Computer-Aided Design of Integrated Circuits and Systems, vol. 18, no. 12, pp. 1741-1749, 1999.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • W. Pyka
    • 1
  • C. Heitzinger
    • 1
  • N. Tamaoki
    • 2
  • T. Takase
    • 2
  • T. Ohmine
    • 2
  • S. Selberherr
    • 2
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria
  2. 2.TOSHIBA Corporate R&D CenterKawasakiJapan

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