Advertisement

Fully 2d Quantum-Mechanical Simulation of Nanoscale Mosfets

  • A. Pirovano
  • A. L. Lacaita
  • A. S. Spinelli
Conference paper

Abstract

We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET’s. The validity of semiclassical transport models are first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.

Keywords

Quantum Mechanical Threshold Voltage Gate Bias Transmission Amplitude Subthreshold Slope 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1] Chen, W., Ouyang, Q., Register, L. F., Banerjee, S. K. (2000): Quantum effects along the channel of ultra-scaled Si-based MOSFETs?. In: IEDM 2000 Tech. Dig., pp. 291–294Google Scholar
  2. [2]
    Fischetti, M. V. (1998): Theory of electron transport in small semiconductor devices using the Pauli master equation. J. Appl. Phys. 83: 270–291CrossRefGoogle Scholar
  3. [3]
    Lent, C. S., Kirkner, D. J. (1990): The quantum transmitting boundary method. J. Appl. Phys. 67: 6353–6359CrossRefGoogle Scholar
  4. [4] Semiconductor Industry Assoc. (1999): International technology roadmap for semiconductorsGoogle Scholar
  5. [5]
    Spinelli, A., Benvenuti, A., Pacelli, A. (1998): Self-consistent 2D model for quantum effects in n-MOS transistors. IEEE Trans. Electron Devices 45: 1342–1349CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. Pirovano
    • 1
  • A. L. Lacaita
    • 2
  • A. S. Spinelli
    • 2
  1. 1.DEIPolitecnico di MilanoMilanoItaly
  2. 2.Dip. di Scienze CCFFMMUniv. dell’Insubria and INFMComoItaly

Personalised recommendations