Fully 2d Quantum-Mechanical Simulation of Nanoscale Mosfets
We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET’s. The validity of semiclassical transport models are first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.
KeywordsQuantum Mechanical Threshold Voltage Gate Bias Transmission Amplitude Subthreshold Slope
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