Fully 2d Quantum-Mechanical Simulation of Nanoscale Mosfets

  • A. Pirovano
  • A. L. Lacaita
  • A. S. Spinelli
Conference paper


We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET’s. The validity of semiclassical transport models are first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.


Quantum Mechanical Threshold Voltage Gate Bias Transmission Amplitude Subthreshold Slope 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. Pirovano
    • 1
  • A. L. Lacaita
    • 2
  • A. S. Spinelli
    • 2
  1. 1.DEIPolitecnico di MilanoMilanoItaly
  2. 2.Dip. di Scienze CCFFMMUniv. dell’Insubria and INFMComoItaly

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