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Finite Element Simulation of 2d Quantum Effects In Ultra Short Channel Mosfets With High-K Dielectric Gates

  • A. Poncet
  • B. Vergnet
  • M. Mouis
Conference paper

Abstract

Ultra short channel MOS transistors with high permittivity gate dielectrics suffer from carrier quantum confinement in the channel and from electric field fringing in the dielectric layer. This paper deals with the 2D numerical simulation of the coupling between these two physical mechanisms. We shall demonstrate how they impact the threshold parameters in MOS transistors for metallurgical channel lengths ranging from 5 to 50 nanometers. A special attention has been paid to the control on numerical errors.

Keywords

NMOS Transistor Short Channel Effect Equivalent Oxide Thickness Quantum Mechanical Effect Carrier Quantification 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. Poncet
    • 1
  • B. Vergnet
    • 1
  • M. Mouis
    • 1
  1. 1.Laboratoire de Physique de la MatièreVilleurbanne

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