Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High Voltage Power Devices
In this paper, we present a model that describes the initial generation of charge due to the loss of kinetic energy of an ion penetrating into a semiconductor device. 2D simulations of a reverse biased power diode visualize the evolution of carrier densities and electric fields in the interior of the device as initiated by the ion. For the case of irradiation with 17MeV '2C ions, the simulations agree well with recent experimental findings.
KeywordsReverse Bias Soft Error Field Peak Recent Experimental Finding Single Event Effect
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- Terrestrial cosmic rays and soft errors, IBM J. of Res. and Devel., vol. 40, no. 1, 1996, pp. 1-136Google Scholar
- T.J. O'Gorman, The Effect of Cosmic Rays on the Soft Error Rate of a DRAM at Ground Level, Trans. Nucl. Sci., vol. 41, no. 4, 1994, pp. 553-557Google Scholar
- H. Kabza, et al., Cosmic radiation as a cause for power device failure and possible countermeasures, Proc. ISPSD, Davos, Switzerland, 1994, pp. 9-12Google Scholar
- K.H. Maier, A. Denker, P. Voss, H.-W. Becker, Nucl. Instr. and Meth. in Phys. Res., B 146, 1998, pp. 596-600Google Scholar
- J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and the Range of Ions in Solids, Pergamon Press, New York, 1985.Google Scholar
- W. Kaindl, G. Sölkner, P. Voss, G. Wachutka, Proc. of 3' Int. FORTWIHR Conf. Erlangen, Germany, 2001Google Scholar
- ISE Integrated Systems Engineering AG, Dessis user manual 5.0, 1996Google Scholar