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Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High Voltage Power Devices

  • Winfried Kaindl
  • Gerhard Wachutka
  • Gerald Sölkner
Conference paper

Abstract

In this paper, we present a model that describes the initial generation of charge due to the loss of kinetic energy of an ion penetrating into a semiconductor device. 2D simulations of a reverse biased power diode visualize the evolution of carrier densities and electric fields in the interior of the device as initiated by the ion. For the case of irradiation with 17MeV '2C ions, the simulations agree well with recent experimental findings.

Keywords

Reverse Bias Soft Error Field Peak Recent Experimental Finding Single Event Effect 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Winfried Kaindl
    • 1
    • 1
    • 2
  • Gerhard Wachutka
    • 1
    • 1
    • 2
  • Gerald Sölkner
    • 1
    • 1
    • 2
  1. 1.Institute for Physics of ElectrotechnologyMunich University of Technology D-80290MunichGermany
  2. 2.Infineon Technologies AGPower Semiconductors D-81730MunichGermany

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