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A Review of Modeling Issues for RF Heterostructure Device Simulation

  • R. Quay
  • R. Schultheis
  • W. Kellner
  • V. Palankovski
  • S. Selberherr
Conference paper

Abstract

We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by III-V device simulation. A summary of remaining modeling issues is provided

Keywords

Device Simulator Modeling Issue High Electron Mobility Transistor Heterojunction Bipolar Transistor Metamorphic Buffer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • R. Quay
    • 1
  • R. Schultheis
    • 2
  • W. Kellner
    • 2
  • V. Palankovski
    • 3
  • S. Selberherr
    • 3
  1. 1.Fraunhofer-Institute of Applied Solid-State PhysicsTullastrasse 72FreiburgGermany
  2. 2.Infineon Technologies AGWireless ProductsMunichGermany
  3. 3.Institute for MicroelectronicsTU Vienna, Gusshausstrasse 27-29ViennaAustria

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