A Review of Modeling Issues for RF Heterostructure Device Simulation

  • R. Quay
  • R. Schultheis
  • W. Kellner
  • V. Palankovski
  • S. Selberherr
Conference paper


We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by III-V device simulation. A summary of remaining modeling issues is provided


Device Simulator Modeling Issue High Electron Mobility Transistor Heterojunction Bipolar Transistor Metamorphic Buffer 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • R. Quay
    • 1
  • R. Schultheis
    • 2
  • W. Kellner
    • 2
  • V. Palankovski
    • 3
  • S. Selberherr
    • 3
  1. 1.Fraunhofer-Institute of Applied Solid-State PhysicsTullastrasse 72FreiburgGermany
  2. 2.Infineon Technologies AGWireless ProductsMunichGermany
  3. 3.Institute for MicroelectronicsTU Vienna, Gusshausstrasse 27-29ViennaAustria

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