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Stochastic Properties of Monte-Carlo Device Simulations

  • Christoph Jungemann
  • Bernd Meinerzhagen
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

The relative stochastic error of a quantity evaluated by stationary MC simulation is proportional to its variance, which can be evaluated with the corresponding autocorrelation function (cf. Sec. 3.4).

Keywords

Spectral Intensity Drain Current Device Simulation Stochastic Property Stochastic Error 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2003

Authors and Affiliations

  • Christoph Jungemann
    • 1
  • Bernd Meinerzhagen
    • 1
  1. 1.Institut für Theoretische Elektrotechnik und MikroelektronikUniversität BremenBremenGermany

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