Carrier Diffusion Processes

  • Karlheinz Seeger
Part of the Springer Study Edition book series (SSE)


The discussion of Eqs.(4j.8) — (4j.11) has shown that a temperature gradient in a conductor yields a concentration gradient n with the effect of a diffusion current = -eDn n where Dn is proportional to the electron mobility due to the Einstein relation Eq.(4j.12). In this chapter we will investigate the diffusion of “injected” carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.


Diffusion Length Minority Carrier Surface Recombination Einstein Relation Emitter Current Density 
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Copyright information

© Springer-Verlag Wien 1973

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.Ludwig Boltzmann-Institut für FestkörperphysikWienÖsterreich
  2. 2.Institut für Angewandte PhysikUniversität WienÖsterreich

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