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Carrier Diffusion Processes

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Semiconductor Physics

Part of the book series: Springer Study Edition ((SSE))

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Abstract

The discussion of Eqs.(4j.8) — (4j.11) has shown that a temperature gradient in a conductor yields a concentration gradient n with the effect of a diffusion current EquationSource<m:math display='block'> <m:mover accent='true'> <m:mi>j</m:mi> <m:mo>&#x2192;</m:mo> </m:mover> </m:math> ]]</EquationSource><EquationSource Format="TEX"><![CDATA[$$\vec j$$ = -eDn n where Dn is proportional to the electron mobility due to the Einstein relation Eq.(4j.12). In this chapter we will investigate the diffusion of “injected” carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.

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References

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Authors and Affiliations

  1. Ludwig Boltzmann-Institut für Festkörperphysik, Wien, Österreich

    Karlheinz Seeger

  2. Institut für Angewandte Physik, Universität Wien, Österreich

    Karlheinz Seeger

Authors
  1. Karlheinz Seeger
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© 1973 Springer-Verlag Wien

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Seeger, K. (1973). Carrier Diffusion Processes. In: Semiconductor Physics. Springer Study Edition. Springer, Vienna. https://doi.org/10.1007/978-3-7091-4111-3_5

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  • DOI: https://doi.org/10.1007/978-3-7091-4111-3_5

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-211-81186-3

  • Online ISBN: 978-3-7091-4111-3

  • eBook Packages: Springer Book Archive

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