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Elementary Properties of Semiconductors

  • Karlheinz Seeger
Part of the Springer Study Edition book series (SSE)

Abstract

A consequence of the discovery of electricity was the observation that metals are good conductors while non-metals are poor conductors. The latter were called insulators. Metallic conductivity is typically between 106 and 104 (ohm-cm)−1 while typical insulators have conductivities of less than 10−10 (ohm-cm)−1. Some solids with conductivities between 104 and 10−10(ohm-cm)−1 are classified as “semiconductors”. However, substances such as alkali-halides whose conductivity is due to electrolytic decomposition shall be excluded. Also we restrict our discussion to chemically uniform, “homogeneous” substances and prefer those which can be obtained in monocrystalline form. Even then we have to distinguish between semiconductors and semimetals. This distinction is possible only as a result of thorough investigation of optical and electrical properties and how they are influenced by temperature, magnetic field, etc. Without giving further explanations at this time the statement is made that semiconductors have an “energy gap” while semimetals and metals have no such gap. However, very impure semiconductors show a more or less metallic behavior and with many substances the art of purification by e.g. zone refining [1] is not so far advanced that a distinction can easily be made. The transition between semiconductors and insulators is even more gradual and depends on the ratio of the energy gap to the temperature of investigation. Very pure semiconductors become insulators when the temperature approaches the absolute zero.

Keywords

Valence Electron Gallium Arsenide Elementary Property Cuprous Oxide Conduction Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1973

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.Ludwig Boltzmann-Institut für FestkörperphysikWienÖsterreich
  2. 2.Institut für Angewandte PhysikUniversität WienÖsterreich

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