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Numerical Simulation — A Case Study

  • Peter A. Markowich
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

We shall here present numerical results from a two-dimensional simulation of a silicon MOS-transistor in order to highlight the structure of solutions of the static device problem and to demonstrate the power of the presented numerical methods and the state of the art in device modeling.

Keywords

Interface Layer Doping Profile Electron Current Density Avalanche Generation Finite Difference Grid 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [6.1]
    Schütz, A.: Simulation des Lawinendurchbruchs in MOS-Transistoren. Dissertation, Technische Universität Wien, Austria, 1982.Google Scholar
  2. [6.2]
    Selberherr, S.: Two Dimensional Modeling of MOS-Transistors. Dissertation, TU Wien, translated by Semiconductor Physics Inc., Escondido, Cal., 1982.Google Scholar
  3. [6.3]
    Sze, S. M.: Physics of Semiconductor Devices, 2nd ed. Cambridge—New York: J. Wiley 1981.Google Scholar
  4. [6.4]
    Überhuber, C. et al.: MOSPLOT: A Software Package for the Graphical Presentation of MINIMOS Results. Report, Institut für Angewandte und Numerische Mathematik, Technische Universität Wien, Austria, 1985.Google Scholar

Copyright information

© Springer-Verlag Wien 1986

Authors and Affiliations

  • Peter A. Markowich
    • 1
  1. 1.Institut für Angewandte und Numerische MathematikTechnische Universität WienViennaAustria

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